参数资料
型号: MBRF10100CT-E3/4W
厂商: Vishay General Semiconductor
文件页数: 2/5页
文件大小: 83K
描述: DIODE ARR SCHOTTKY 100V 5A TO220
标准包装: 1,000
系列: TMBS®
电压 - 在 If 时为正向 (Vf)(最大): 850mV @ 5A
电流 - 在 Vr 时反向漏电: 100µA @ 100V
电流 - 平均整流 (Io)(每个二极管): 5A
电压 - (Vr)(最大): 100V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3 隔离片
供应商设备封装: ITO-220AB
包装: 管件
MBRF1090CT, MBRF10100CT
www.vishay.com
Vishay General Semiconductor
Revision: 16-Aug-13
2
Document Number: 89126
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ?
40 ms
?
RATINGS AND CHARACTERISTICS CURVES ?
(TA
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repe
titive Peak Forward Surge
Current Per Diode
ELECTRICAL CHARACTERISTICS (TC
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MBRF1090CT MBRF10100CT UNIT
Maximum instantaneous forward voltage
per diode (1)
IF
= 5.0 A T
C
= 125 °C
= 25 °C 0.85
VF
0.75
V
IF
= 5.0 A T
C
Maximum reverse current per diode at
working peak reverse voltage (2)
TJ
= 25 °C
= 100 °C 6.0 mA
IR
100 μA
TJ
THERMAL CHARACTERISTICS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBRF1090CT MBRF10100CT UNIT
Typical thermal resistance per diode R?JC
6.8 °C/W
ORDERING INFORMATION (EXAMPLE)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
ITO-220AB MBRF10100CT-M3/4W 1.75 4W 50/tube Tube
0
2
4
6
12
10
0507525 100 125 150 175
8
Average Forward Rectified Curr
ent (A)
Case Temperature (°C)
Resistive or Inductive Load
Mounted on Specific Heatsink
0
20
60
40
100
80
120
1
100
10
TJ
= T
J
Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
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