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参数资料
| 型号： | MBRF10200CT |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220FP, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 148K |
| 代理商： | MBRF10200CT |
Number: DB-150
March 2010, Revision D
Page 1
TAK CHEONG
SEMICONDUCTOR
10A SCHOTTKY BARRIER DIODE
Full Pack High Voltage Schottky
Rectifier
Specification Features:
High Voltage Wide Range Selection, 100V, 150V & 200V
High Switching Speed Device
Low Forward Voltage Drop
Low Power Loss and High Efficiency
Guard Ring for Over-voltage Protection
High Surge Capability
RoHS Compliant
Matte Tin(Sn) Lead Finish
Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C Wave Soldering or
per MIL-STD-750, Method 2026.
DEVICE MARKING DIAGRAM
POLARITY CONFIGURATION
MAXIMUM RATINGS (Per Leg, unless otherwise specified )
Symbol
Parameter
MBRF10100CT
MBRF10150CT
MBRF10200CT
Units
VRRM
VRWM
VR
Maximum Repetitive Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Reverse Voltage
100
150
200
V
IF(AV)
Average Rectified Forward Current
Per Leg
Per Package
5
10
A
IFSM
Non-repetitive Peak Forward Surge Current
8.3mS Single Phase @ Rated Load
80
A
TSTG
Storage Temperature Range
-65 to +150
°C
TJ
Operating Junction Temperature
+150
°C
These ratings are limiting values above which the serviceability of the diode may be impaired.
THERMAL CHARACTERISTIC
Symbol
Parameter
Value
Units
RθJC
Maximum Thermal Resistance, Junction-to-Case
1.5
°C/W
RθJA
Maximum Thermal Resistance, Junction-to-Ambient (per leg)
62.5
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg)
TA = 25°C unless otherwise noted
MBRF10100CT
MBRF10150CT
MBRF10200CT
Symbol
Parameter
Test Condition
(Note 1)
Min
Max
Min
Max
Min
Max
Units
IR
Reverse Current
@ rated VR
---
100
---
100
---
100
μA
VF
Forward Voltage
IF = 5A
IF = 10A
---
0.85
0.95
---
0.92
1.00
---
1.00
1.25
V
Note/s:
1. Tested under pulse condition of 300
μS.
MBRF10100CT
through
M
B
RF10200CT
1
2
3
TO-220FP
1. Anode
2. Cathode
3. Anode
L xxyy
Line 2
Line 3
Line 4
L = Tak Cheong Logo
xxyy = Monthly Date Code
Line 2 = MBRF
Line 3 = 10xxxCT
Line 4 = Polarity
相关PDF资料 |
PDF描述 |
|---|---|
| MBRF10100CT | 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF1030CT | 10 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF1045CT | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF1040CT-G | 10 A, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF1060CT | 5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRF10200CT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 200V 10A 3-Pin(3+Tab) ITO-220AB Tube |
| MBRF10200CT-JT | 制造商:Diodes Incorporated 功能描述:SCHOTTKY RECTIFIER ITO-220AB TUBE 50PCS - Rail/Tube 制造商:Diodes Incorporated 功能描述:DIODE SCHOTTKY 10A ITO-220AB |
| MBRF10200CTR | 功能描述:DIODE ARRAY SCHOTTKY 200V ITO220 制造商:smc diode solutions 系列:- 包装:管件 零件状态:有效 二极管配置:1 对共阴极 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:200V 电流 - 平均整流（Io）（每二极管）:- 不同 If 时的电压 - 正向（Vf）:980mV @ 5A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:1mA @ 200V 安装类型:通孔 封装/外壳:TO-220-3 隔离片 供应商器件封装:ITO-220AB 标准包装:50 |
| MBRF10200D | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:10.0AMPS Isolated Schottky Barrier Rectifier |
| MBRF10200D C0 | 功能描述:肖特基二极管与整流器 10A 200V SINGLE SCHOTTKY REC ISOLATD RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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