- 您现在的位置：买卖IC网 > PDF目录133256 > MBRF1035HE3/45 (VISHAY SEMICONDUCTORS) 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC PDF资料下载
参数资料
| 型号： | MBRF1035HE3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 129K |
| 代理商： | MBRF1035HE3/45 |
MBR(F,B)1035 thru MBR(F,B)1060
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88669
Revision: 07-May-08
2
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBR1035
MBR1045
MBR1050
MBR1060
UNIT
Maximum instantaneous
forward voltage (1)
IF = 10 A
IF = 20 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VF
-
0.57
0.84
0.72
0.80
0.70
0.95
0.85
V
Maximum instantaneous
reverse current at rated DC
blocking voltage (1)
TJ = 25 °C
TJ = 125 °C
IR
0.10
15
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
Maximum thermal resistance from junction to case
RθJC
2.0
4.0
2.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AC
MBR1045-E3/45
1.80
45
50/tube
Tube
ITO-220AC
MBRF1045-E3/45
1.94
45
50/tube
Tube
TO-263AB
MBRB1045-E3/45
1.33
45
50/tube
Tube
TO-263AB
MBRB1045-E3/81
1.33
81
800/reel
Tape and reel
TO-220AC
MBR1045HE3/45 (1)
1.80
45
50/tube
Tube
ITO-220AC
MBRF1045HE3/45 (1)
1.94
45
50/tube
Tube
TO-263AB
MBRB1045HE3/45 (1)
1.33
45
50/tube
Tube
TO-263AB
MBRB1045HE3/81 (1)
1.33
81
800/reel
Tape and reel
Figure 1. Forward Current Derating Curve
2
4
6
8
10
12
0
MBR1035 - MBR1045
MBR1050 - MBR1060
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
0
50
100
150
Case Temperature (°C)
Resistive or Inductive Load
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
0.1
1
10
100
25
50
75
125
150
175
100
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
相关PDF资料 |
PDF描述 |
|---|---|
| MBRF1060HE3/45 | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC |
| M50100DD1200 | 100 A, 1200 V, SILICON, RECTIFIER DIODE |
| M50100DD1600 | 100 A, 1600 V, SILICON, RECTIFIER DIODE |
| M50100DD400 | 100 A, 400 V, SILICON, RECTIFIER DIODE |
| M50100SB400 | 100 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRF1040 | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:SCHOTTKY BARRIER RECTIFIER |
| MBRF1040CT | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:10 Amp Schottky Barrier Rectifier 20 to 100 Volts |
| MBRF1040CT-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Schottky Barrier Rectifiers |
| MBRF1040-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Schottky Barrier Rectifiers |
| MBRF1045 | 功能描述:肖特基二极管与整流器 10 Amp 45 Volt Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。