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参数资料
| 型号： | MBRF1060CT |
| 厂商： | LITE-ON ELECTRONICS INC |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC, ITO-220AB, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 72K |
| 代理商： | MBRF1060CT |
MBRF1060CT
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.7 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 60 Volts
FORWARD CURRENT - 10 Amperes
10
125
MBRF1060CT
60
42
60
10000
VRMS
VDC
VRRM
I(AV)
IFSM
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
TJ
Operating Temperature Range
C
TSTG
Storage Temperature Range
C
Typical Thermal Resistance (Note 3)
R0JC
C/W
CJ
Typical Junction Capacitance,
per element (Note 2)
pF
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =125 C
mA
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
VF
Maximum Forward
Voltage, (Note 1)
V
Voltage Rate of Change (Rated VR)
TJ =125 C
TJ =25 C
TJ =125 C
@IF=5A
@IF=10A
dv/dt
Maximum Average Forward RectifiedCurrent
at TC=120 C (See Fig.1)
-55 to +150
-55 to +175
4.0
220
0.1
15
0.65
0.80
0.90
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
V/us
SEMICONDUCTOR
LITE-ON
REV. 2, Aug-2007, KTHC50
ITO-220AB
PIN 1
PIN 3
PIN 2
All Dimensions in millimeter
ITO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
15.50
16.50
10.40
10.0
3.00
3.50
9.30
9.00
2.90
3.60
13.46
14.22
1.15
1.70
0.75
2.70
N
M
L
K
J
I
1.00
2.40
0.70
0.45
3.00
3.30
4.36
4.77
2.48
2.80
2.50
G
I
C
E
J
B
K
A
M
D
L
N
F
H
PIN
1
2
3
Vdis
V
Dielectric Strengh from terminals to case,
AC with t=1 minute, RH<30%
2000
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
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PDF描述 |
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| MBRF1060CT | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF16100CT | 16 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF16200CT | 20 A, SILICON, RECTIFIER DIODE, TO-220AB |
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| MBRF2060CT | 20 A, 60 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRF1060CT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 60V 10A 3-Pin(3+Tab) ITO-220AB Tube 制造商:Taiwan Semiconductor 功能描述:Diode Schottky 60V 10A 3-Pin(3+Tab) ITO-220AB Tube |
| MBRF1060CT_08 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:SCHOTTKY BARRIER TYPE DIODE |
| MBRF1060CT-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Schottky Barrier Rectifiers |
| MBRF1060CTL | 功能描述:DIODE ARRAY SCHOTTKY 60V ITO220 制造商:smc diode solutions 系列:- 包装:管件 零件状态:有效 二极管配置:1 对共阴极 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:60V 电流 - 平均整流（Io）（每二极管）:- 不同 If 时的电压 - 正向（Vf）:600mV @ 5A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:1mA @ 60V 安装类型:通孔 封装/外壳:TO-220-3 隔离片 供应商器件封装:ITO-220AB 标准包装:50 |
| MBRF1060CTP | 功能描述:DIODE ARRAY SCHOTTKY 60V ITO220 制造商:smc diode solutions 系列:- 包装:管件 零件状态:有效 二极管配置:1 对共阴极 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:60V 电流 - 平均整流（Io）（每二极管）:- 不同 If 时的电压 - 正向（Vf）:700mV @ 5A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:1mA @ 60V 安装类型:通孔 封装/外壳:TO-220-3 隔离片 供应商器件封装:ITO-220AB 标准包装:50 |
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