参数资料
型号: MBRF1060HE3/45
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC
封装: ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN
文件页数: 3/5页
文件大小: 129K
代理商: MBRF1060HE3/45
MBR(F,B)1035 thru MBR(F,B)1060
Vishay General Semiconductor
Document Number: 88669
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
100
T
J = 150 °C
T
J = 25 °C
Pulse Width = 300 s
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
MBR1035 - MBR1045
MBR1050 - MBR1060
0
20
40
60
80
100
0.001
0.01
0.1
1
10
100
T
J = 125 °C
T
J = 75 °C
T
J = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instanteno
u
s
Re
v
erse
C
u
rrent
(mA)
MBR1035 - MBR1045
MBR1050 - MBR1060
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
0.1
1
10
100
1000
10 000
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
MBR1035 - MBR1045
MBR1050 - MBR1060
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
0.01
0.1
1
10
100
0.1
10
100
1
T
ransient
Ther
mal
Impedance
(°C/
W
)
t - Pulse Duration (s)
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