- 您现在的位置：买卖IC网 > PDF目录81412 > MBRF1090-HE3/45 (VISHAY SEMICONDUCTORS) 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC PDF资料下载
参数资料
| 型号： | MBRF1090-HE3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 127K |
| 代理商： | MBRF1090-HE3/45 |
Vishay General Semiconductor
MBR(F,B)1090 & MBR(F,B)10100
Document Number 88665
23-Feb-07
www.vishay.com
1
High-Voltage Schottky Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
Solder Dip 260 °C, 40 seconds (for TO-220AC &
ITO-220AC package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
supplies,
free-wheeling
diodes,
dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
10 A
VRRM
90 V, 100 V
IFSM
150 A
VF
0.65 V
Tj max
150 °C
CASE
PIN 2
PIN 1
TO-220AC
MBR1090
MBR10100
MBRB1090
MBRB10100
PIN 1
PIN 2
K
HEATSINK
1
2
1
2
K
1
2
MBRF1090
MBRF10100
ITO-220AC
PIN 2
PIN 1
TO-263AB
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR1090
MBR10100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TC = 133 °C
IF(AV)
10
A
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
IFSM
150
A
Peak repetitive reverse current at tp = 2 s, 1 kHz
IRRM
0.5
A
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
Isolation voltage (ITO-220AC only)
From terminal to heatsink t = 1 minute
VAC
1500
V
相关PDF资料 |
PDF描述 |
|---|---|
| MBRF7H45-HE3/45 | 7.5 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MQ1EZ110DTR | 110 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AL |
| MQ1EZ150D10E3TR | 150 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AL |
| MQ1EZ180DE3TR | 180 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AL |
| MQ1GZ110D1E3 | 110 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRF1090-M3/4W | 制造商:Vishay Semiconductors 功能描述:10A,90V,TRENCH SKY RECT. |
| MBRF10H | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Barrier Rectifiers |
| MBRF10H100 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Voltage Schottky Rectifiers |
| MBRF10H100/45 | 功能描述:DIODE SCHTKY 10A 100V ITO-220AC RoHS:否 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879 |
| MBRF10H1000CT | 制造商:KERSEMI 制造商全称:Kersemi Electronic Co., Ltd. 功能描述:Plastic package has Underwriters Laboratory Flammability Classification 94V-0 |
发布紧急采购，3分钟左右您将得到回复。