- 您现在的位置：买卖IC网 > PDF目录264451 > MBRF1535CT (GENERAL SEMICONDUCTOR INC) 7.5 A, 35 V, SILICON, RECTIFIER DIODE PDF资料下载
参数资料
| 型号： | MBRF1535CT |
| 厂商： | GENERAL SEMICONDUCTOR INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 7.5 A, 35 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, ITO-220AB, 3 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 82K |
| 代理商： | MBRF1535CT |
1
10
100
0
50
100
150
200
250
300
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.01
0.1
1
10
50
0.01
0.1
1
10
100
0.1
1
10
100
0
50
100
150
0
5
10
15
20
25
0.1
1
10
100
10
100
1,000
4,000
0
20
40
60
80
100
0.001
0.01
0.1
1
10
50
FIG. 1 - FORWARD CURRENT DERATING CURVE
CASE TEMPERATURE, °C
A
VERAGE
FOR
W
ARD
CURRENT
,
AMPERES
FIG. 4 - TYPICAL REVERSE
CHARACTERISTICS
INST
ANT
ANEOUS
REVERSE
CURRENT
,
MILLIAMPERES
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
FIG. 5 - TYPICAL JUNCTION CAPACITANCE PER LEG
JUNCTION
CAP
ACIT
ANCE,
pF
REVERSE VOLTAGE, VOLTS
TJ=75°C
TJ=25°C
RESISTIVE OR INDUCTIVE LOAD
TJ=125°C
FIG.6- TYPICAL TRANSIENT THERMAL
IMPEDANCE PER LEG
t, PULSE DURATION, sec.
TRANSIENT
THERMAL
IMPEDANCE,
°C/W
MBR1535 - MBR1545
MBR1550 & MBR1560
MBR1535 - MBR1545
MBR1550 & MBR1560
TJ=25°C
f=1.0 MHz
Vsig=50mVp-p
1
10
100
25
50
75
100
125
150
175
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
NUMBER OF CYCLES AT 60 HZ
PEAK
FOR
W
ARD
SURGE
CURRENT
,
AMPERES
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.01
0.1
1
10
50
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
,
AMPERES
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
TJ=25°C
TJ=125°C
PULSE WIDTH=300s
1% DUTY CYCLE
MBR 1535 - MBR 1545
MBR 1550 & MBR 1560
MBR15xxCT, MBRF15xxCT
& MBRB15xxCT Series
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
相关PDF资料 |
PDF描述 |
|---|---|
| MB15W-6 | 15 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE |
| MBR2035CT-1 | 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA |
| MAZ4100(N)-L | 9.66 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
| MAZ4120(N)-H | 12.33 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
| MAZ4150(N)-M | 14.66 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRF1535CT_1 | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:Isolated 15.0 AMPS. Schottky Barrier Rectifiers |
| MBRF1535CT_11 | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:15.0 AMPS. Isolated Schottky Barrier Rectifiers |
| MBRF1535CT_13 | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:15.0 AMPS. Isolated Schottky Barrier Rectifiers |
| MBRF1535CT-E3/45 | 功能描述:肖特基二极管与整流器 35 Volt 15A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRF1535CTHE3/45 | 功能描述:肖特基二极管与整流器 35 Volt 15A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。