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参数资料
型号： MBRF15H35CT
厂商： VISHAY SEMICONDUCTORS
元件分类： 整流器
英文描述： 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB
封装： PLASTIC, ITO-220AB, 3 PIN
文件页数： 2/3页
文件大小： 86K
代理商： MBRF15H35CT
MBR15HxxCT, MBRF15HxxCT & MBRB15HxxCT Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88782
2
14-Mar-03
Maximum Ratings (TC = 25 °C unless otherwise noted)
Parameter
Symbol MBR15H35CT MBR15H45CT MBR15H50CT MBR15H60CT
Unit
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Max. average forward rectified current
Total device
15
(see figure 1)
Per leg
IF(AV)
7.5
A
Peak repetitive forward current at TC = 155 °C per leg
(rated VR, 20 KHz sq. wave)
IFRM
15
A
Non-repetitive avalanche energy per leg
at 25
°C, IAS = 4A, L = 10 mH
EAS
80
mJ
Peak forward surge current 8.3 ms single half sine-wave
IFSM
150
A
superimposed on rated load (JEDEC Method)
Peak repetitive reverse surge current per leg
at tp = 2.0
s, 1 KHZ
IRRM
1.0
0.5
A
Peak non-repetitive reverse energy (8/20
s waveform)
ERSM
20
10
mJ
Electrostatic discharge capacitor voltage
VC
25
kV
Human body model: C = 100 F, R = 1.5 k
Voltage rate of change (rated VR)
dv/dt
10,000
V/
s
Operating junction temperature range
TJ
–65 to +175
°C
Storage temperature range
TSTG
–65 to +175
°C
RMS Isolation voltage (MBRF type only) from terminals
4500(1)
to heatsink with t = 1.0 second, RH
≤ 30%
VISOL
3500(2)
V
1500(3)
Electrical Characteristics (TC = 25 °C unless otherwise noted)
Parameter
Symbol
MBR15H35CT, MBR15H45CT MBR15H50CT, MBR15H60CT
Unit
Typ
Max
Typ
Max
Maximum instantaneous
at IF = 7.5 A
TJ = 25 °C
–
0.63
–
0.73
forward voltage per leg(4)
at IF = 7.5 A
TJ = 125 °C
VF
0.50
0.55
0.58
0.61
V
at IF = 15 A
TJ = 25 °C
–
0.75
–
0.87
at IF = 15 A
TJ =125 °C
0.61
0.66
0.68
0.72
Maximum instantaneous reverse current
TJ = 25 °C
–
50
–
50
A
at rated DC blocking voltage per leg(4)
TJ =125 °C
IR
3.0
10
2.0
10
mA
Thermal Characteristics (TC = 25 °C unless otherwise noted)
Parameter
Symbol
MBR
MBRF
MBRB
Unit
Maximum thermal resistance per leg
R
θJC
3.0
5.0
3.0
°C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(3) Screw mounting with 4-40 screw, where washer diameter is
≤ 4.9 mm (0.19”)
(2) Clip mounting (on case), where leads do overlap heatsink
(4) Pulse test: 300
s pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
Package Option
MBR15H35CT – MBR15H60CT
TO-220AB
45
Anti-Static tube, 50/tube, 2K/carton
MBRF15H35CT – MBRF15H60CT
ITO-220AB
45
Anti-Static tube, 50/tube, 2K/carton
31
13” reel, 800/reel, 4.8K/carton
MBRB15H35CT – MBRB15H60CT
TO-263AB
45
Anti-Static tube, 50/tube, 2K/carton
81
Anti-Static 13” reel, 800/reel, 4.8K/carton
相关PDF资料
PDF描述
MBRF15H60CT 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR15H50CT-E3/45 7.5 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR15H60CT-E3/45 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR15H60CT-HE3/45 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRB15H35CT-HE3/81 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB
相关代理商/技术参数
参数描述
MBRF15H45CT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifiers
MBRF15H45CT-E3/45 功能描述:肖特基二极管与整流器 45 Volt 15A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRF15H45CTHE3/45 功能描述:肖特基二极管与整流器 45 Volt 15A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRF15H50CT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier
MBRF15H60CT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifiers
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