参数资料
型号: MBRF15H50CTHE3/45
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 7.5 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB
封装: ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
文件页数: 1/5页
文件大小: 146K
代理商: MBRF15H50CTHE3/45
New Product
MBR(F,B)15H35CT thru MBR(F,B)15H60CT
Vishay General Semiconductor
Document Number: 88782
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
7.5 A x 2
VRRM
35 V to 60 V
IFSM
150 A
VF
0.55 V, 0.61 V
IR
50 A
TJ max.
175 °C
TO-263AB
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR15HxxCT
ITO-220AB
MBRB15HxxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
MBRF15HxxCT
PIN 2
PIN 1
PIN 3
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR15H35CT
MBR15H45CT
MBR15H50CT
MBR15H60CT UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Max. average forward rectified current
(Fig. 1)
total device
per diode
IF(AV)
15
7.5
A
Non-repetitive avalanche energy per diode
at 25 °C, IAS = 4 A, L = 10 mH
EAS
80
mJ
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
150
A
Peak repetitive reverse surge current per diode
at tp = 2.0 s, 1 kHz
IRRM
1.0
0.5
A
Peak non-repetitive reverse energy
(8/20 s waveform)
ERSM
20
10
mJ
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