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参数资料
| 型号： | MBRF16H35HE3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 16 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 130K |
| 代理商： | MBRF16H35HE3/45 |
MBR(F,B)16H35 thru MBR(F,B)16H60
Vishay General Semiconductor
Document Number: 88784
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 3. Typical Instantaneous Forward Characteristics
0
5
10
15
20
25
0
50
75
100
125
150
175
MBRF
MBR, MBRB
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
1
10
100
0
25
50
75
100
125
150
Number of Cycles at 60 Hz
Peak
For
w
ard
S
u
rge
C
u
rrent
(A)
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
0.01
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
10
100
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
MBR16H35 - MBR16H45
MBR16H50 - MBR16H60
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
Figure 4. Typical Reverse Characteristics
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
0.0001
0.001
0.1
0.01
1
10
100
MBR16H35 - MBR16H45
MBR16H50 - MBR16H60
020
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
Leakage
C
u
rrent
(mA)
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
0.1
1
100
10
1000
100
10 000
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
MBR16H35 - MBR16H45
MBR16H50 - MBR16H60
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
0.01
0.1
1
10
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
相关PDF资料 |
PDF描述 |
|---|---|
| MBRF16H60HE3/45 | 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRF735HE3/45 | 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRF750HE3/45 | 7.5 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRF7H50HE3/45 | 7.5 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRF7H60HE3/45 | 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRF16H45 | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:SCHOTTKY BARRIER RECTIFIERS |
| MBRF16H45 C0 | 功能描述:肖特基二极管与整流器 16A 45V SINGLE SCHOTTKY REC ISOLATD RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRF16H45-E3/45 | 功能描述:肖特基二极管与整流器 45 Volt 16A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRF16H45HE3/45 | 功能描述:肖特基二极管与整流器 45 Volt 16A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRF16H50 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Barrier Rectifier |
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