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参数资料
| 型号： | MBRF16H50-E3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 16 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 130K |
| 代理商： | MBRF16H50-E3/45 |
MBR(F,B)16H35 thru MBR(F,B)16H60
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88784
Revision: 19-May-08
2
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
Note:
(1) Automotive grade AEC Q101 qualified
Operating junction temperature range
TJ
- 65 to + 175
°C
Storage temperature range
TSTG
- 65 to + 175
°C
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
VAC
1500
V
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR16H35
MBR16H45
MBR16H50
MBR16H60
UNIT
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBR16H35
MBR16H45
MBR16H50
MBR16H60
UNIT
TYP.
MAX.
TYP.
MAX.
Maximum instantaneous forward voltage (1)
IF = 16 A
TJ = 25 °C
TJ = 125 °C
VF
-
0.52
0.66
0.56
-
0.58
0.73
0.62
V
Maximum reverse current at rated VR
(2)
TJ = 25 °C
TJ = 125 °C
IR
-
6.0
100
20
-
4.0
100
20
A
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
Thermal resistance, junction to case
RθJC
1.5
3.0
1.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AC
MBR16H45-E3/45
1.80
45
50/tube
Tube
ITO-220AC
MBRF16H45-E3/45
1.94
45
50/tube
Tube
TO-263AB
MBRB16H45-E3/45
1.33
45
50/tube
Tube
TO-263AB
MBRB16H45-E3/81
1.33
81
800/reel
Tape and reel
TO-220AC
MBR16H45HE3/45 (1)
1.80
45
50/tube
Tube
ITO-220AC
MBRF16H45HE3/45 (1)
1.94
45
50/tube
Tube
TO-263AB
MBRB16H45HE3/45 (1)
1.33
45
50/tube
Tube
TO-263AB
MBRB16H45HE3/81 (1)
1.33
81
800/reel
Tape and reel
相关PDF资料 |
PDF描述 |
|---|---|
| MBRF16H60-HE3/45 | 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR16H60-HE3/45 | 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRB16H60-HE3/81 | 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB16H50-E3/45 | 16 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB16H35HE3/81 | 16 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRF16H60 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Barrier Rectifiers |
| MBRF16H60-E3/45 | 功能描述:肖特基二极管与整流器 60 Volt 16A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRF16H60HE3/45 | 功能描述:肖特基二极管与整流器 60 Volt 16A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRF16HXX | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Barrier Rectifiers |
| MBRF200100 | 功能描述:肖特基二极管与整流器 Schottky Rectifier - 100 V - 200 A - TO-244AB RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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