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参数资料
| 型号： | MBRF20100CT |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220FP, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 150K |
| 代理商： | MBRF20100CT |
Number: DB-151
March 2010, Revision D
Page 1
TAK CHEONG
SEMICONDUCTOR
20A SCHOTTKY BARRIER DIODE
Full Pack High Voltage Schottky
Rectifier
Specification Features:
High Voltage Wide Range Selection, 100V, 150V & 200V
High Switching Speed Device
Low Forward Voltage Drop
Low Power Loss and High Efficiency
Guard Ring for Over-voltage Protection
High Surge Capability
RoHS Compliant
Matte Tin(Sn) Lead Finish
Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C Wave Soldering or
per MIL-STD-750, Method 2026.
DEVICE MARKING DIAGRAM
POLARITY CONFIGURATION
MAXIMUM RATINGS (Per Leg, unless otherwise specified )
Symbol
Parameter
MBRF20100CT
MBRF20150CT
MBRF20200CT
Units
VRRM
VRWM
VR
Maximum Repetitive Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Reverse Voltage
100
150
200
V
IF(AV)
Average Rectified Forward Current
Per Leg
Per Package
10
20
A
IFSM
Non-repetitive Peak Forward Surge Current
8.3mS Single Phase @ Rated Load
150
A
TSTG
Storage Temperature Range
-65 to +150
°C
TJ
Operating Junction Temperature
+150
°C
These ratings are limiting values above which the serviceability of the diode may be impaired.
THERMAL CHARACTERISTICS
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
RθJC
Maximum Thermal Resistance, Junction-to-Case
2.0
°C/W
RθJA
Maximum Thermal Resistance, Junction-to-Ambient (per leg)
60
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode )
TA = 25°C unless otherwise noted
MBRF20100CT
MBRF20150CT
MBRF20200CT
Symbol
Parameter
Test Condition
(Note 1)
Min
Max
Min
Max
Min
Max
Units
IR
Reverse Current
@ rated VR
---
200
---
200
---
200
μA
VF
Forward Voltage
IF = 10A
IF = 20A
---
0.85
0.95
---
0.92
1.00
---
1.00
1.25
V
Note/s:
1. Tested under pulse condition of 300
μS.
MBRF20100CT
through
M
B
RF20200CT
1
2
3
TO-220FP
1. Anode
2. Cathode
3. Anode
L xxyy
Line 2
Line 3
Line 4
L = Tak Cheong Logo
xxyy = Monthly Date Code
Line 2 = MBRF
Line 3 = 20xxxCT
Line 4 = Polarity
相关PDF资料 |
PDF描述 |
|---|---|
| MBRF25150CT | 25 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF2535CT | 25 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF2520CT-BP | 25 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF2530CT-BP | 25 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF2540CT-BP | 25 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRF20100CT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 100V 20A 3-Pin(3+Tab) ITO-220AB Tube |
| MBRF20100CT_08 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:SCHOTTKY BARRIER TYPE DIODE |
| MBRF20100CT-4W | 制造商:KERSEMI 制造商全称:Kersemi Electronic Co., Ltd. 功能描述:Trench MOS Schottky technology |
| MBRF20100CT-E3 | 制造商:Vishay Semiconductors 功能描述:Rectifier; ITO-220AB; 0.95 V; 10000 |
| MBRF20100CT-E3/45 | 制造商:Vishay Semiconductors 功能描述:SCHOTTKY RECTIFIER CMN CTHD 20A ITO220AB 制造商:Vishay Semiconductors 功能描述:SCHOTTKY RECTIFIER CMN CTHD 20A ITO220AB; Diode Type:Schottky; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):20A; Forward Voltage VF Max:800mV; Diode Case Style:TO-220AB ;RoHS Compliant: Yes |
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