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参数资料
| 型号： | MBRF20150CT |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 整流器 |
| 英文描述： | 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC, ITO-220AB, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 80K |
| 代理商： | MBRF20150CT |
MBRF20150CT
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
Low leakage current
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.70 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 150 Volts
FORWARD CURRENT - 20 Amperes
SEMICONDUCTOR
LITE-ON
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
VRMS
VDC
VRRM
I(AV)
IFSM
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
20
180
Typical Thermal Resistance (Note 2)
R0JC
2.5
C/W
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
VF
V
Voltage Rate of Change (Rated VR)
dv/dt
10000
IR
@TJ =125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
8
5
uA
mA
TC =120 C
Maximum Forward
Voltage (Note 1)
IF=10A @
IF=20A @
TJ =125 C
TJ =25 C
TJ =125 C
TJ =25 C
MBRF20150CT
150
105
150
V/us
0.92
0.75
1.00
0.86
Typical Junction Capacitance
per element (Note 3)
CJ
250
pF
REV. 2, Oct-2010, KTHC31
G
I
C
E
J
B
K
A
M
D
L
N
F
H
PIN
1
2
3
ITO-220AB
All Dimensions in millimeter
ITO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
15.50
16.50
10.40
10.0
3.00
3.50
9.30
9.00
2.90
3.60
13.46
14.22
1.15
1.70
0.75
2.70
N
M
L
K
J
I
1.00
2.40
0.70
0.45
3.00
3.30
4.36
4.77
2.48
2.80
2.50
PIN 1
PIN 3
PIN 2
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Device mounted on 226 x114 x 8mm Alumium plate
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
TJ,
TSTG
Operating Junction and Storage
Temperature Range
-65 to +175
℃
Vdis
V
Dielectric Strengh from terminals to case,
AC with t=1 minute, RH<30%
2000
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PDF描述 |
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| MBRF2060CT | 20 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
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| MBRF30100CT | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRF20150CT_08 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:SCHOTTKY BARRIER TYPE DIODE |
| MBRF20150CT_HF | 制造商:LITEON-SEMI 功能描述:20A 150V Schottky Rectifiers |
| MBRF20150CTL | 功能描述:DIODE ARRAY SCHOTTKY 150V ITO220 制造商:smc diode solutions 系列:- 包装:管件 零件状态:有效 二极管配置:1 对共阴极 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:150V 电流 - 平均整流（Io）（每二极管）:- 不同 If 时的电压 - 正向（Vf）:950mV @ 10A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:1mA @ 150V 安装类型:通孔 封装/外壳:TO-220-3 隔离片 供应商器件封装:ITO-220AB 标准包装:50 |
| MBRF20150CTR | 功能描述:DIODE ARRAY SCHOTTKY 150V ITO220 制造商:smc diode solutions 系列:- 包装:管件 零件状态:有效 二极管配置:1 对共阳极 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:150V 电流 - 平均整流（Io）（每二极管）:- 不同 If 时的电压 - 正向（Vf）:900mV @ 10A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:1mA @ 150V 安装类型:通孔 封装/外壳:TO-220-3 隔离片 供应商器件封装:ITO-220AB 标准包装:50 |
| MBRF20150D | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:20.0AMPS Isolated Schottky Barrier Rectifier |
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