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参数资料
| 型号： | MBRF20200CT |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC, ITO-220AB, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 78K |
| 代理商： | MBRF20200CT |
MBRF20200CT
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
Low leakage current
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.70 grams
Mounting position : Any
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 200 Volts
FORWARD CURRENT - 20 Amperes
SEMICONDUCTOR
LITE-ON
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
VRMS
VDC
VRRM
I(AV)
IFSM
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
10
20
180
Typical Thermal Resistance (Note 2)
R0JC
2.5
C/W
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
VF
V
Voltage Rate of Change (Rated VR)
dv/dt
10000
IR
@TJ =125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
8
5
uA
mA
TC =120 C
Maximum Forward
Voltage (Note 1)
IF=10A @
IF=20A @
TJ =125 C
TJ =25 C
TJ =125 C
TJ =25 C
MBRF20200CT
200
140
200
V/us
0.92
0.75
1.00
0.86
Typical Junction Capacitance
per element (Note 3)
CJ
250
pF
REV. 2, Oct-2010, KTHC32
G
I
C
E
J
B
K
A
M
D
L
N
F
H
PIN
1
2
3
ITO-220AB
All Dimensions in millimeter
ITO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
15.50
16.50
10.40
10.0
3.00
3.50
9.30
9.00
2.90
3.60
13.46
14.22
1.15
1.70
0.75
2.70
N
M
L
K
J
I
1.00
2.40
0.70
0.45
3.00
3.30
4.36
4.77
2.48
2.80
2.50
PIN 1
PIN 3
PIN 2
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Device mounted on 226 x114 x 8mm Alumium plate
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
TJ,
TSTG
Operating Junction and Storage
Temperature Range
-65 to +175
℃
Vdis
V
Dielectric Strengh from terminals to case,
AC with t=1 minute, RH<30%
2000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRF20200-CT | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS |
| MBRF20200CT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 200V 20A 3-Pin(3+Tab) ITO-220AB Tube |
| MBRF20200CT_08 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:SCHOTTKY BARRIER TYPE DIODE |
| MBRF20200CTC0 | 制造商:Taiwan Semiconductor 功能描述:Schottky diode 200V, 20A. ITO-220AB |
| MBRF20200CTG | 功能描述:肖特基二极管与整流器 20A 200V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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