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| 型号： | MBRF2060CT |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 128K |
| 描述： | DIODE SCHOTTKY 60V 10A TO-220FP |
| 产品变化通告： | Product Obsolescence 19/Jun/2009 |
| 标准包装： | 50 |
| 系列： | SWITCHMODE™ |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 850mV @ 10A |
| 电流 - 在 Vr 时反向漏电： | 150µA @ 60V |
| 电流 - 平均整流 (Io)（每个二极管）： | 10A |
| 电压 - (Vr)（最大）： | 60V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220FP |
| 包装： | 管件 |
MBRF2060CT
http://onsemi.com
2
MAXIMUM RATINGS
(Per Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60
V
Average Rectified Forward Current
(Rated VR), TC
= 133
°C Total Device
IF(AV)
10
20
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), TC
= 133
°C
IFRM
20
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
150
A
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz)
IRRM
0.5
A
Operating Junction and Storage Temperature Range (Note 1)
TJ, Tstg
?
65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/s
RMS Isolation Voltage (t = 0.3 second, R.H. ≤
30%, T
A
= 25
°C) (Note 2) Per Figure 3
Viso1
4500
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
(Per Leg)
Rating
Symbol
Value
Unit
Maximum Thermal Resistance, Junction?to?Case
RJC
4.0
°C/W
Lead Temperature for Soldering Purposes: 1/8 in from Case for 5 Seconds
TL
260
°C
ELECTRICAL CHARACTERISTICS
(Per Leg)
Characteristic
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage (Note 3)
(iF
= 10 Amp, T
C
= 25
°C)
(iF
= 10 Amp, T
C
= 125
°C)
(iF
= 20 Amp, T
C
= 25
°C)
(iF
= 20 Amp, T
C
= 125
°C)
vF
0.85
0.75
0.95
0.85
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated DC Voltage, TC
= 25
°C)
(Rated DC Voltage, TC
= 125
°C)
iR
0.15
150
mA
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
2. Proper strike and creepage distance must be provided.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%
Figure 1. Typical Forward Voltage Per Diode Figure 2. Typical Reverse Current Per Diode
0.01
0.1
1.0
10
120
100
80
60
40
20
0
VR, REVERSE VOLTAGE (VOLTS)
I
R
, REVERSE CURRENT (mA)
TJ
= 150
°C
TJ
= 125
°C
TJ
= 100
°C
TJ
= 25
°C
0.5
0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
1.0
3.0
5.0
10
20
50
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
TJ
= 25
°C
100°C
150°C
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