参数资料
型号: MBRF20H100CTG-E3
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 10 A, 100 V, SILICON, RECTIFIER DIODE
封装: PLASTIC, ITO-220AB, 3 PIN
文件页数: 4/4页
文件大小: 127K
代理商: MBRF20H100CTG-E3
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
0.1
0.3
1.1
0.5
100
10
0.1
0.01
1.0
0.7
0.9
1
0.1
10
100
1000
10000
0.01
Fig. 3 — Typical Instantaneous
Forward Characteristics Per Leg
TJ = 175°C
I R
--
Instantaneous
Reverse
Current
(
A
)
Junction
Capacitance
(pF)
1
10
100
1000
0.1
10
Fig. 5 — Typical Junction Capacitance
Per Leg
20
100
40
60
80
Fig. 4 — Typical Reverse
Characteristics Per Leg
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
I F
--
Instantaneous
Forward
Current
(A)
TJ = 150°C
100
°C
125
°C
25
°C
TJ = 25°C
TJ = -- 40°C
TJ = 150°C
0
4
8
12
16
20
24
0
25
50
75
100
125
150
175
Fig. 1 — Forward Derating Curve
A
verage
Forward
Current
(A)
Case Temperature (C)
TJ = 125°C
0.01
110
100
10
0.1
1
Reverse Voltage (V)
TJ = 100°C
1
10
100
50
25
75
100
125
150
175
Fig. 2 — Maximum Non-Repetitive
Peak Forward Surge Current Per Leg
Peak
Forward
Surge
Current
(A)
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Fig. 6 — Typical Transient
Thermal Impedance Per Leg
t -- Pulse Duration (sec.)
Transient
Thermal
Impedance
(
°C/W)
MBRF
MBR
MBRB
MBR(F,B)20H100CTG Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88856
www.vishay.com
13-Sep-02
3
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