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参数资料
| 型号： | MBRF20H200CT-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | LEAD FREE, PLASTIC, ITO-220AB, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 403K |
| 代理商： | MBRF20H200CT-E3 |
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Document Number 88786
26-Aug-05
Vishay Semiconductors
www.vishay.com
1
TO-262AA
MBR20H200CT
MBRF20H200CT
SB20H200CT-1
CASE
PIN 2
PIN 1
PIN 3
1
2
3
TO-220AB
1
2
3
ITO-220AB
Dual Common-Cathode High-Voltage Schottky Rectifier
Low Leakage Current 5.0 A
Major Ratings and Characteristics
Features
Guarding for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
High frequency operation
Solder Dip 260 °C, 40 seconds
IF(AV)
2 x 10 A
VRRM
200 V
IFSM
290 A
VF
0.75 V
Tj
175 °C
Mechanical Data
Case: TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte Tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Mounting Torque: 10 in-lbs maximum
Polarity: As marked
Typical Applications
For use in high frequency inverters, free wheeling and
polarity protection applications
Maximum Ratings
(TC = 25 °C, unless otherwise noted)
Parameter
Symbol
MBR20H200CT
Unit
Maximum repetitive peak reverse voltage
VRRM
200
V
Working peak reverse voltage
VRWM
200
V
Maximum DC blocking voltage
VDC
200
V
Maximum average forward rectified current
Total device
Per leg
IF(AV)
20
10
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per leg
IFSM
290
A
Peak repetitive reverse current per leg at tp = 2 s, 1 KHz
IRRM
1.0
A
Peak non-repetitive reverse surge energy per leg (8/20 s waveform)
ERSM
20
mJ
Non-repetitive avalanche energy per leg at 25 °C, IAS = 2.0 A, L = 10 mH
EAS
20
mJ
Electrostatic discharge capacitor voltage
Human body model air discharge: C = 100 pF, R 0 1.5 k
Ω
VC
25
KV
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
Isolation voltage (ITO-220AB only)
From terminals to heatsink t = 1 minute
VAC
1500
V
相关PDF资料 |
PDF描述 |
|---|---|
| SB20H200CT-1 | 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA |
| MBRP20030CTLG | 100 A, 30 V, SILICON, RECTIFIER DIODE |
| MCL103B-TR3 | 0.2 A, SILICON, SIGNAL DIODE |
| MCL103C-TR | 0.2 A, SILICON, SIGNAL DIODE |
| MCL103A-TR3 | 0.2 A, SILICON, SIGNAL DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRF20H200CT-E3/45 | 功能描述:肖特基二极管与整流器 200 Volt 20A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRF20H35CT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| MBRF20H45CT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| MBRF20H45CT-E3/45 | 功能描述:肖特基二极管与整流器 45 Volt 20A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRF20H45CTHE3/45 | 功能描述:肖特基二极管与整流器 45 Volt 20A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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