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参数资料
| 型号： | MBRF20L60CTG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 113K |
| 描述： | DIODE SCHOTTKY 60V 10A TO220FP |
| 标准包装： | 50 |
| 系列： | SWITCHMODE™ |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 570mV @ 10A |
| 电流 - 在 Vr 时反向漏电： | 380µA @ 60V |
| 电流 - 平均整流 (Io)（每个二极管）： | 10A |
| 电压 - (Vr)（最大）： | 60V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220FP |
| 包装： | 管件 |
MBR20L60CT MBRF20L60CT
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60
V
Average Rectified Forward Current
MBR20L60CT (Rated VR) TC
= 138
°C Per Diode
MBRF20L60CT (Rated VR) TC
= 123
°C Per Device
IF(AV)
10
20
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
240
A
Operating Junction Temperature (Note 1)
TJ
?55 to +150
°C
Storage Temperature
Tstg
65 to +175
°C
ESD Ratings: Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Maximum Repetitive Peak Avalanche Voltage
(tp
< 1
s, TJ
< 150
°C, IAR
< 51 A)
VARM
85
V
Maximum Single?Pulse Peak Avalanche Voltage
(tp
< 1
s, TJ
< 150
°C, IAR
< 51 A)
VASM
85
V
THERMAL CHARACTERISTICS
Maximum Thermal Resistance
MBR20L60CT
?
Junction
?to?Case
?
Junction
?to?Ambient
MBRF20L60CT
?
Junction
?to?Case
?
Junction
?to?Ambient
RJC
RJA
RJC
RJA
2.3
70
5.2
75
°C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Rating
Symbol
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF
= 10 A, T
C
= 25
°C)
(IF
= 10 A, T
C
= 125
°C)
(IF
= 20 A, T
C
= 25
°C)
(IF
= 20 A, T
C
= 125
°C)
vF
0.53
0.49
0.68
0.64
0.57
0.54
0.73
0.69
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC
= 25
°C)
(Rated DC Voltage, TC
= 125
°C)
iR
118
52
380
96
A
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
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相关代理商/技术参数 |
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| MBRF20L80CT | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SWITCHMODE? Power Rectifier 80 V, 20 A |
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