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参数资料
| 型号： | MBRF30H60CT-E3/45 |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 566K |
| 描述： | DIODE SCHOTTKY 30A 60V TO223-3 |
| 标准包装： | 1,000 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 680mV @ 15A |
| 电流 - 在 Vr 时反向漏电： | 60µA @ 60V |
| 电流 - 平均整流 (Io)（每个二极管）： | 15A |
| 电压 - (Vr)（最大）： | 60V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 隔离片 |
| 供应商设备封装： | ITO-220AB |
| 包装： | 管件 |
MBR(F,B)30H35CT thru MBR(F,B)30H60CT
www.vishay.com
Vishay General Semiconductor
Revision: 24-Oct-12
2
Document Number: 88866
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ?
40 ms
Note
(1) AEC-Q101 qualified
Non-repetitive avalanche energy per diode
at 25 °C, IAS
= 4 A, L = 10 mH
EAS
80 mJ
Electrostatic discharge capacitor voltage human
body model: C = 100 pF, R = 1.5 k?
VC
25 kV
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG
- 65 to + 175 °C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500 V
ELECTRICAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL
MBR30H35CT
MBR30H45CT
MBR30H50CT
MBR30H60CT
UNIT
Maximum instantaneous forward voltage
per diode (1)
IF
= 15 A T
C
= 25 °C
= 125 °C 0.49 0.56 0.55 0.59
= 30 A T
VF
C
= 25 °C - 0.73 - 0.83
- 0.62 - 0.68
V
IF
= 15 A T
C
IF
IF
= 30 A T
C
= 125 °C 0.62 0.67 0.68 0.71
Maximum reverse current per diode at
working peak reverse voltage (2)
TJ
= 25 °C
= 125 °C 5.0 15 4.0 15 mA
IR
- 80 - 60 μA
TJ
MAXIMUM RATINGS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT
UNIT
THERMAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR MBRF MBRB UNIT
Typical thermal resistance junction to
case per diode
R?JC
1.5 4.5 1.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR30H45CT-E3/45 1.85 45 50/tube Tube
ITO-220AB MBRF30H45CT-E3/45 1.99 45 50/tube Tube
TO-263AB MBRB30H45CT-E3/45 1.35 45 50/tube Tube
TO-263AB MBRB30H45CT-E3/81 1.35 81 800/teel Tape and reel
TO-220AB MBR30H45CTHE3/45
(1)
1.85 45 50/tube Tube
ITO-220AB MBRF30H45CTHE3/45 (1)
1.99 45 50/tube Tube
TO-263AB MBRB30H45CTHE3/45
(1)
1.35 45 50/tube Tube
TO-263AB MBRB30H45CTHE3/81 (1)
1.35 81 800/teel Tape and reel
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| MBRF30H50CT-E3/45 | DIODE SCHOTTKY 30A 50V TO223-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRF30H60CTG | 功能描述:二极管 - 通用，功率，开关 SW MD PWR RECT 30A 60V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| MBRF30H60CTG | 制造商:ON Semiconductor 功能描述:Schottky Rectifier |
| MBRF30H60CTHE3/45 | 功能描述:肖特基二极管与整流器 60 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRF30H90CT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High-Voltage Dual Schottky Rectifiers |
| MBRF30L100CT | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:30.0 AMP. Schottky Barrier Rectifiers |
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