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参数资料
| 型号： | MBRF30L60CTG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 136K |
| 描述： | DIODE SCHOTTKY 60V 15A TO220FP |
| 标准包装： | 50 |
| 系列： | SWITCHMODE™ |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 620mV @ 15A |
| 电流 - 在 Vr 时反向漏电： | 350µA @ 60V |
| 电流 - 平均整流 (Io)（每个二极管）： | 15A |
| 电压 - (Vr)（最大）： | 60V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220FP |
| 包装： | 管件 |
MBR30L60CT, MBRF30L60CT
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
60
V
Average Rectified Forward Current (Per Leg)
MBR30L60CT (Rated VR) TC
= 133
°C (Per Device)
MBRF30L60CT (Rated VR) TC
= 108
°C (Per Device)
IF(AV)
15
30
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
240
A
Operating Junction Temperature (Note 1)
TJ
?55 to +150
°C
Storage Temperature
Tstg
?65 to +175
°C
ESD Ratings: Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Thermal Resistance
MBR30L60CT Junction?to?Case
Junction?to?Ambient
MBRF30L60CT Junction?to?Case
Junction?to?Ambient
RJC
RJA
RJC
RJA
2.1
70
5.0
75
°C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Rating
Symbol
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF
= 15 A, T
C
= 25
°C)
(IF
= 15 A, T
C
= 125
°C)
(IF
= 30 A, T
C
= 25
°C)
(IF
= 30 A, T
C
= 125
°C)
vF
0.57
0.53
0.75
0.70
0.62
0.57
0.81
0.73
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC
= 25
°C)
(Rated DC Voltage, TC
= 125
°C)
iR
137
62
350
110
A
mA
2. Pulse Test: Pulse Width = 300
s, Duty Cycle
≤
2.0%.
DEVICE ORDERING INFORMATION
Device Order Number
Package Type
Shipping?
MBR30L60CTG
TO?220
(Pb?Free)
50 Units / Rail
MBRF30L60CTG
TO?220FP
(Pb?Free)
50 Units / Rail
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel
Packaging
Specification Brochure, BRD8011/D.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRF30U100CTA | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:SCHOTTKY BARRIER TYPE DIODE |
| MBRF30U60CTA | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:SCHOTTKY BARRIER TYPE DIODE |
| MBRF400100 | 功能描述:肖特基二极管与整流器 Schottky Rectifier - 100 V - 400 A - TO-244AB RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRF400100R | 功能描述:肖特基二极管与整流器 Schottky Rectifier - 100 V - 400 A - TO-244AB RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRF40020 | 功能描述:肖特基二极管与整流器 Schottky Rectifier - 20 V - 400 A - TO-244AB RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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