参数资料
型号: MBRM120ET1
厂商: ON SEMICONDUCTOR
元件分类: 参考电压二极管
英文描述: Surface Mount Schottky Power Rectifier
中文描述: 1 A, 20 V, SILICON, SIGNAL DIODE, DO-216AA
封装: PLASTIC, CASE 457-04, POWERMITE-2
文件页数: 2/8页
文件大小: 90K
代理商: MBRM120ET1
MBRM120E
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
V
Average Rectified Forward Current (At Rated VR, TC = 130
°
C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 135
°
C)
IO
1.0
A
IFRM
2.0
A
Non–Repetitive Peak Surge Current
(Non–Repetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM
50
A
Storage Temperature
Tstg
TJ
dv/dt
–65 to 150
°
C
Operating Junction Temperature
–65 to 150
°
C
Voltage Rate of Change (Rated VR, TJ = 25
°
C)
THERMAL CHARACTERISTICS
10,000
V/ s
Thermal Resistance – Junction–to–Lead (Anode) (Note 1)
Thermal Resistance – Junction–to–Tab (Cathode) (Note 1)
Thermal Resistance – Junction–to–Ambient (Note 1)
Rtjl
Rtjtab
Rtja
35
23
277
°
C/W
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 and 10.
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2
VF
TJ = 25
°
C
0.455
0.530
0.595
TJ = 100
°
C
0.360
0.455
0.540
V
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 2.0 A)
Maximum Instantaneous Reverse Current (Note 2), See Figure 4
IR
TJ = 25
°
C
10
1.0
0.5
TJ = 100
°
C
1600
500
300
A
(VR = 20 V)
(VR = 10 V)
(VR = 5.0 V)
2. Pulse Test: Pulse Width
250
μ
s, Duty Cycle
2%.
相关PDF资料
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