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参数资料
| 型号： | MBRM130LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/5页 |
| 文件大小： | 174K |
| 描述： | DIODE SCHOTTKY 30V 1A POWERMITE |
| 产品目录绘图： | Rectifier POWERMITE Pkg |
| 标准包装： | 10 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 30V |
| 电流 - 平均整流 (Io)： | 1A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 380mV @ 1A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 410µA @ 30V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-216AA |
| 供应商设备封装： | Powermite |
| 包装： | 标准包装 |
| 产品目录页面： | 1569 (CN2011-ZH PDF) |
| 其它名称： | MBRM130LT1GOSDKR |
       MBRM130LT1G, NRVBM130LT1G, MBRM130LT3G, NRVBM130LT3G http://onsemi.com 3 I R , MAXIMUM REVERSE CURRENT (AMPS) I R , REVERSE CURRENT (AMPS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 20 0 VR, REVERSE VOLTAGE (VOLTS) 10E?3 1.0E?3 100E?6 10E?6 1.0E?6 VR, REVERSE VOLTAGE (VOLTS) 5.0 10 15 30 0 100E?6 10E?6 5.0 10 15 TJ = 85 ?C TJ = 25 ?C 100E?3 10E?3 1.0E?3 30 25 20 25 TJ = 85 ?C TJ = 25 ?C P FO , AVERAGE POWER DISSIPATION (WATTS) I O , AVERAGE FORWARD CURRENT (AMPS) Ipk/Io = 5 Figure 5. Current Derating Figure 6. Forward Power Dissipation 35 65 85 9545 7555 115105 125 25 TL, LEAD TEMPERATURE (?C) 1.8 1.2 1.0 0.8 0.2 0 IO, AVERAGE FORWARD CURRENT (AMPS) 0.2 0 0.7 0.6 0.5 0.3 0.1 0 0.4 0.8 1.2 1.60.6 1.41.0 1.4 0.4 1.6 SQUARE WAVE dc Ipk/Io = Ipk/Io = 10 Ipk/Io = 20 Ipk/Io = 20 Ipk/Io = 10 Ipk/Io = 5 Ipk/Io = SQUARE WAVE dc 0.6 0.4 FREQ = 20 kHz 0.2 T J , DERATED OPERATING TEMPERATURE ( C) C, CAPACITANCE (pF) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* 0 VR, REVERSE VOLTAGE (VOLTS) 1000 100 10 VR, DC REVERSE VOLTAGE (VOLTS) 15 3020 25 20 0 60 40 5.0 1510 5.0 10 50 140 150 * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re- verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: T J = T Jmax ? r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as T J = T Jmax ? r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. Rtja = 10 ?C/W 15?C/W 25?C/W 35?C/W TJ = 25 ?C 30 20 25 80 20?C/W 30 120 100 110 130 90 70 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRM130LT1G | 制造商:ON Semiconductor 功能描述:Schottky Rectifier |
| MBRM130LT3 | 功能描述:肖特基二极管与整流器 1A 30V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRM130LT3G | 功能描述:肖特基二极管与整流器 1A 30V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRM130LT3G | 制造商:ON Semiconductor 功能描述:Schottky Rectifier |
| MBRM140 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Surface Mount Schottky Power Rectifier |
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