参数资料
型号: MBRM140ET3
厂商: ON SEMICONDUCTOR
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 40 V, SILICON, SIGNAL DIODE, DO-216AA
封装: MINIATURE, PLASTIC, CASE 457-04, POWERMITE-2
文件页数: 2/6页
文件大小: 65K
代理商: MBRM140ET3
MBRM140E
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
V
Average Rectified Forward Current (Rated VR, TC = 110°C)
IO
1.0
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TC = 110°C)
IFRM
2.0
A
NonRepetitive Peak Surge Current
(NonRepetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM
50
A
Storage Temperature
Tstg
55 to 150
°C
Operating Junction Temperature
TJ
55 to 150
°C
Voltage Rate of Change (Rated VR, TJ = 25°C)
dv/dt
10,000
V/
ms
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Resistance, JunctiontoLead (Anode) (Note 1)
Thermal Resistance, JunctiontoTab (Cathode) (Note 1)
Thermal Resistance, JunctiontoAmbient (Note 1)
Rtjl
Rtjtab
Rtja
35
23
277
°C/W
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 6 and 7.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Instantaneous Forward Voltage
(IF = 0.1 A, TC = 25°C)
(IF = 1.0 A, TC = 25°C)
(IF = 0.1 A, TC = 150°C)
(IF = 1.0 A, TC = 150°C)
VF
0.42
0.52
0.24
0.41
0.45
0.58
0.26
0.47
V
Instantaneous Reverse Current (Rated VR)
TC = 25°C
TC = 150°C
IR
0.3
1.4
15
20
mA
2. Pulse Test: Pulse Width
≤ 250 ms, Duty Cycle ≤ 2%.
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