参数资料
型号: MBRM140ET3G
厂商: ON SEMICONDUCTOR
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 40 V, SILICON, SIGNAL DIODE, DO-216AA
封装: LEAD FREE, MINIATURE, PLASTIC, CASE 457-04, POWERMITE-2
文件页数: 1/6页
文件大小: 65K
代理商: MBRM140ET3G
Semiconductor Components Industries, LLC, 2005
September, 2005 Rev. 1
1
Publication Order Number:
MBRM140E/D
MBRM140E
Low Leakage Surface
Mount Schottky Power
Rectifier
POWERMITE
Power Surface Mount Package
The Schottky Powermite employs the Schottky Barrier principle
with a barrier metal and epitaxial construction that produces optimal
forward voltage dropreverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the Powermite has the same thermal performance as the SMA while
being 50% smaller in footprint area, and delivering one of the lowest
height profiles,
< 1.1 mm in the industry. Because of its small size, it is
ideal for use in portable and battery powered products such as cellular
and cordless phones, chargers, notebook computers, printers, PDAs
and PCMCIA cards. Typical applications are ACDC and DCDC
converters, reverse battery protection, and “ORing” of multiple supply
voltages and any other application where performance and size are
critical.
Features
Low Leakage Current (IR) Provides Higher Efficiency and Extends
Battery Life
Low Profile Maximum Height of 1.1 mm
Small Footprint Footprint Area of 8.45 mm2
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
ESD Ratings: Machine Model, C
Human Body Model, 3B
PbFree Packages are Available
Mechanical Characteristics:
Powermite is JEDEC Registered as D0216AA
Case: Molded Epoxy
Epoxy Meets UL 94 V0 @ 0.125 in
Weight: 62 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260
°C Maximum for 10 Seconds
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 40 VOLTS
POWERMITE
CASE 457
PLASTIC
CATHODE
ANODE
MARKING DIAGRAM
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
M
BCK
G
M
= Date Code
BCK
= Device Code
G
= PbFree Package
Device
Package
Shipping
ORDERING INFORMATION
MBRM140ET1
POWERMITE 3000/Tape & Reel
MBRM140ET3
POWERMITE 12000/Tape & Reel
MBRM140ET1G POWERMITE
(PbFree)
3000/Tape & Reel
MBRM140ET3G POWERMITE
(PbFree)
12000/Tape & Reel
相关PDF资料
PDF描述
MBRM140ET1G 1 A, 40 V, SILICON, SIGNAL DIODE, DO-216AA
MBRP60035CTLG 300 A, 35 V, SILICON, RECTIFIER DIODE
MBRS1045CT 10 A, 45 V, SILICON, RECTIFIER DIODE
MBRS1100TRPBF 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AA
MBRS120TR 1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AA
相关代理商/技术参数
参数描述
MBRM140T1 功能描述:肖特基二极管与整流器 1A 40V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRM140T1G 功能描述:肖特基二极管与整流器 1A 40V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRM140T1G 制造商:ON Semiconductor 功能描述:Schottky Rectifier
MBRM140T1G-CUT TAPE 制造商:ON 功能描述:MBRM Series 1 A 40 V Surface Mount Schottky Power Rectifier - POWERMITE-2
MBRM140T1H 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: