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参数资料
| 型号： | MBRP20035L |
| 厂商： | MICROSEMI CORP-COLORADO |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 240 AMP SCHOTTKY RECTIFIER |
| 中文描述： | 240 A, 35 V, SILICON, RECTIFIER DIODE |
| 文件页数： | 1/2页 |
| 文件大小： | 55K |
| 代理商： | MBRP20035L |
1
Rectifier Device Data
POWERTAP III Package
. . . employing the Schottky Barrier principle in a large area metal–to–silicon power
diode. State of the art geometry features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high frequency switching
power supplies, free wheeling diode and polarity protection diodes.
Very Low Forward Voltage Drop
Highly Stable Oxide Passivated Junction
Guardring for Stress Protection
High dv/dt Capability
Mechanical Characteristics:
Dual Die Construction
Case: Epoxy, Molded with Plated Copper Heatsink Base
Weight: 40 grams (approximately)
Finish: All External Surfaces Corrosion Resistant
Base Plate Torques: See procedure given in the
Package Outline Section
Top Terminal Torque: 25–40 lb–in max.
Shipped 50 units per foam
Marking: MBRP20035L
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
35
Volts
Average Rectified Forward Current
(At Rated VR, TC = 100
°
C)
IO
200
Amps
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 100
°
C)
IFRM
400
Amps
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
IFSM
2000
Amps
Peak Repetitive Reverse Surge Current (2.0
μ
s, 1.0 kHz)
IRRM
Tstg, TC
TJ
dv/dt
2.0
Amps
Storage / Operating Case Temperature
55 to +150
°
C
Operating Junction Temperature
55 to +150
°
C
Voltage Rate of Change (Rated VR, TJ = 25
°
C)
THERMAL CHARACTERISTICS
10,000
V/
μ
s
Thermal Resistance — Junction–to–Case
R
θ
JC
0.45
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(IF = 200 A)
VF
TJ = 25
°
C
0.57
TJ = 100
°
C
0.5
Volts
Maximum Instantaneous Reverse Current
(VR = 35 V)
IR
TJ = 25
°
C
10
TJ = 100
°
C
250
mA
(1) Pulse Test: Pulse Width
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
POWERTAP III and SWITCHMODE are trademarks of Motorola, Inc.
380
μ
s, Duty Cycle
2%.
Order this document
by MBRP20035L/D
SEMICONDUCTOR TECHNICAL DATA
1
2
SCHOTTKY BARRIER
RECTIFIER
200 AMPERES
35 VOLTS
POWERTAP III
CASE 357D–01
1
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRP20045CT | 功能描述:肖特基二极管与整流器 200A 45V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRP20045CTG | 功能描述:肖特基二极管与整流器 200A 45V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRP20060 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SCHOTTKY BARRIER RECTIFIER 200 AMPERES 60 VOLT |
| MBRP20060CT | 功能描述:肖特基二极管与整流器 200A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRP20060CTG | 功能描述:肖特基二极管与整流器 200A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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