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参数资料
| 型号： | MBRP30060T |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 整流器 |
| 英文描述： | 150 A, 60 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, CASE 357C-03, POWERTAP II, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 139K |
| 代理商： | MBRP30060T |
Semiconductor Components Industries, LLC, 2006
September, 2006 Rev. 4
1
Publication Order Number:
MBRP30060CT/D
MBRP30060CT
Preferred Device
POWERTAPt II
SWITCHMODEt
Power Rectifier
These stateoftheart devices use the Schottky Barrier principle
with a platinum barrier metal.
Features
Dual Diode Construction May Be Paralleled for Higher Current
Output
Guardring for Stress Protection
Low Forward Voltage
150°C Operating Junction Temperature
PbFree Package is Available*
Mechanical Characteristics:
Case: Epoxy, Molded with Metal Heatsink Base
Weight: 80 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant
Top Terminal Torque: 2540 lbin Max
Base Plate Torques:
See procedure given in the Package Outline Section
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60
V
Average Rectified Forward Current
(Rated VR, TC = 140°C)
Per Leg
Per Device
IF(AV)
150
300
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave,
20 kHz, TC = 140°C)
Per Leg
IFRM
300
A
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz) Per Leg
IFSM
2500
A
Peak Repetitive Reverse Current
(2.0 ms, 1.0 kHz)
Per Leg
IRRM
2.0
A
Storage Temperature Range
Tstg
55 to +150
°C
Operating Junction Temperature
TJ
55 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCHOTTKY
BARRIER RECTIFIER
300 AMPERES, 60 VOLTS
1
2
3
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
MBRP30060T
POWERTAP II 25 Units/Tray
POWERTAP II
CASE 357C
PLASTIC
1
2
3
MARKING DIAGRAM
B30060T
B30060T = Specific Device Code
MCC
= Mold Compound Code
A
= Assembly Location
YY
= Year
WW
= Work Week
G= PbFree Package
MCC
AYYWWG
MBRP30060TG
POWERTAP II
(PbFree)
25 Units/Tray
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRP3010N | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:SCHOTTKY BARRIER RECTIFIER |
| MBRP3010NTU | 功能描述:肖特基二极管与整流器 Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRP3010NTU_Q | 功能描述:肖特基二极管与整流器 Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRP3045N | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:SCHOTTKY BARRIER RECTIFIER |
| MBRP3045N_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Schottky Barrier Rectifier |
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