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参数资料
| 型号： | MBRS10H100CT |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE |
| 封装： | LEAD FREE, PLASTIC, D2PAK-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 264K |
| 代理商： | MBRS10H100CT |
Jul - 09
MBRS10H100CT ....... MBRS10H200CT
10.0 Amp. Surface Mount Schottky Barrier Rectifier
10 A
120 A
– 65 to + 175 °C
Electrical Characteristics
D2PAK
100
70
100
MBRS
10H100CT
4
1
2
3
MBRS
10H150CT
MBRS
10H200CT
150
105
150
200
140
200
PIN 1
PIN 3
CASE
PIN 4
VF
IR
Rthj-c
Typical Thermal Resistance Per Leg (Note 3)
0.85 V
3.5 °C/W
Maximum Instantaneous Forward Voltage at
(Note 2)
IF = 5 A, Tc = 25 °C
IF = 5 A, Tc = 125 °C
IF = 10 A, Tc = 25 °C
IF = 10 A, Tc = 125 °C
1.0 mA
0.75 V
0.95 V
0.85 V
0.88 V
0.75 V
0.97 V
0.85 V
Max. Instantaneous Reverse Current @ TC=25°C
at Rated DC Blocking Voltage
@ TC=125°C
5.0 A
Cases: D2PAK molded plastic
Terminals: Pure tim plated, lead free, solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Weight: 2.24 grams
Mechanical Data
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction.
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260°C/10 seconds, 6.35mm from case
Mounting position: Any
Mounting torque: 5 in. - Ibs. max
Low power loss, high efficiency
Voltage
100 to 200 V
Current
10.0 A
Maximum RMS Voltage (V)
Maximum DC Blocking Voltage (V)
Maximum Average Forward Rectified Current
at TC=133°C
VRRM
VRMS
VDC
IF (AV)
Tj
Tstg
Operating Junction Temperature Range
Storage Temperature Range
IFSM
Peak Forward Surge Current, 8.3 ms Single Half
sine-wave Superimposed on Rated Load (JEDEC Method)
IRRM
Peak Repetitive Reverse Surge Current (Note 1)
1.0 A
0.5 A
– 65 to + 175 °C
Absolute Maximum Ratings, according to IEC publication No. 134
MBRS
10H100CT
MBRS
10H150CT
MBRS
10H200CT
Notes:
1. 2.0 us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg.
Maximum Recurrent Peak Reverse Voltage (V)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRS10H100CT RN | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 100V 10A 3-Pin(2+Tab) D2PAK T/R |
| MBRS10H100CT_11 | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:10.0AMPS Surface Mount Schottky Barrier Rectifiers |
| MBRS10H100CTRN | 制造商:Taiwan Semiconductor 功能描述:Schottky diode 100V, 10A, D2PAK TO-263 |
| MBRS10H150CT | 功能描述:肖特基二极管与整流器 10 Amp 150 Volt Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRS10H150CT RN | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 150V 10A 3-Pin(2+Tab) D2PAK T/R |
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