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参数资料
| 型号： | MBRS1100T3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Schottky Power Rectifier(Surface Mount Power Package) |
| 中文描述： | 2 A, 100 V, SILICON, RECTIFIER DIODE |
| 文件页数： | 1/4页 |
| 文件大小： | 77K |
| 代理商： | MBRS1100T3 |
1
Rectifier Device Data
Surface Mount Power Package
Schottky Power Rectifiers employ the use of the Schottky Barrier principle in
a large area metal-to-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlay contact. Ideally
suited for low voltage, high frequency rectification, or as free wheeling and
polarity protection diodes, in surface mount applications where compact size
and weight are critical to the system. These state-of-the-art devices have the
following features:
Small Compact Surface Mountable Package with J-Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
High Blocking Voltage — 100 Volts
150
°
C Operating Junction Temperature
Guardring for Stress Protection
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 95 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 260
°
C
Max. for 10 Seconds
Shipped in 12 mm Tape and Reel, 2500 units per reel
Polarity: Notch in Plastic Body Indicates Cathode Lead
Marking: B110
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
Volts
Average Rectified Forward Current
TL = 120
°
C
TL = 100
°
C
IF(AV)
1.0
2.0
Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
50
Amps
Operating Junction Temperature
TJ
dv/dt
– 65 to +150
°
C
Voltage Rate of Change
10
V/ns
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Lead (TL = 25
°
C)
ELECTRICAL CHARACTERISTICS
R
θ
JL
22
°
C/W
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 A, TJ = 25
°
C)
VF
0.75
Volts
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ = 25
°
C)
(Rated dc Voltage, TJ = 100
°
C)
iR
0.5
5.0
mA
(1) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Order this document
by MBRS1100T3/D
SEMICONDUCTOR TECHNICAL DATA
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
100 VOLTS
CASE 403A–03
Motorola Preferred Device
Rev 2
相关PDF资料 |
PDF描述 |
|---|---|
| MBRS1100T3 | 1 Amp Schottky Rectifier |
| MBRS1100TR | SCHOTTKY RECTIFIER |
| MBRS140LT3 | Surface Mount Schottky Power Rectifier(SMB Power Mount Power Package) |
| MBRS140LT3 | Surface Mount Schottky Power Rectifier |
| MBRS140T3 | Surface Mount Schottky Power Rectifier |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRS1100T3_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Schottky Power Rectifier Surface Mount Power Package |
| MBRS1100T3G | 功能描述:肖特基二极管与整流器 1A 100V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRS1100T3G | 制造商:ON Semiconductor 功能描述:DIODE, SCHOTTKY, 1A, 100V, SMB |
| MBRS1100T3G-CUT TAPE | 制造商:ON 功能描述:MBRS1100T3G Series 1 A 100 V Schottky Barrier Rectifier - DO-214AA |
| MBRS1100TR | 功能描述:肖特基二极管与整流器 1.0 Amp 100 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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