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参数资料
| 型号： | MBRS130LPBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-214AA |
| 封装： | LEAD FREE, SIMILAR TO DO-214AA, SMB, 2 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 217K |
| 代理商： | MBRS130LPBF |
MBRS130LTR
Bulletin PD-20588 rev. E 0
7/04
2
www.irf.com
Part number
MBRS130LTR
VR
Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
30
Voltage Ratings
V
FM
Max. Forward Voltage Drop
(1)
0.420
V
@ 1A
0.470
V
@ 2A
0.300
V
@ 1A
0.370
V
@ 2A
1mA
TJ = 25 °C
I
RM
Max. Reverse Leakage Current (1)
10
mA
TJ = 100 °C
20
mA
TJ = 125 °C
C
T
Max. Junction Capacitance
200
pF
V
R = 5VDC (test signal range 100KHz to 1Mhz) 25°C
L
S
Typical Series Inductance
2.0
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
10000
V/s
(Rated V
R)
T
J =
25 °C
T
J =
125 °C
V
R = rated VR
Electrical Specifications
Parameters
Value
Units
Conditions
(1) Pulse Width < 300s, Duty Cycle < 2%
I
F(AV) Max. Average Forward Current
1.0
A
50% duty cycle @ T
L = 106 °C, rectangular wave form
I
FSM
Max.PeakOneCycleNon-Repetitive
230
A
5s Sine or 3s Rect. pulse
Surge Current
40
10ms Sine or 6ms Rect. pulse
E
AS
Non- Repetitive Avalanche Energy
3.0
mJ
T
J = 25 °C, IAS = 1A, L = 6mH
I
AR
Repetitive Avalanche Current
1.0
A
Current decaying linearly to zero in 1 sec
Frequency limited by T
J max. Va = 1.5 x Vr typical
Parameters
Value
Units Conditions
Absolute Maximum Ratings
Following any rated
load condition and
with rated V
RRM applied
TJ
Max. Junction Temperature Range(*) - 55 to 125
°C
Tstg Max. Storage Temperature Range
- 55 to 150
°C
R
thJL Max. Thermal Resistance
25
°C/W DC operation (See Fig. 4)
Junction to Lead
(**)
R
thJA Max. Thermal Resistance
80
°C/W DC operation
Junction to Ambient
wt
Approximate Weight
0.10(0.003) g (oz.)
Case Style
SMB
Similar to DO-214AA
Device Marking
IR13L
Thermal-Mechanical Specifications
Parameters
Value
Units
Conditions
(**) Mounted 1 inch square PCB
<
thermal runaway condition for a diode on its own heatsink
(*) dPtot
1
dTj
Rth( j-a)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRS130LT3 | 功能描述:肖特基二极管与整流器 1A 30V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRS130LT3_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Schottky Power Rectifier |
| MBRS130LT3_09 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Schottky Power Rectifier |
| MBRS130LT3G | 功能描述:肖特基二极管与整流器 1A 30V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRS130LT3G | 制造商:ON Semiconductor 功能描述:DIODE SCHOTTKY 1A 30V SMB 制造商:ON Semiconductor 功能描述:DIODE, SCHOTTKY, 1A, 30V, SMB |
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