参数资料
型号: MBRS130TRPBF
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 30 V, SILICON, SIGNAL DIODE, DO-214AA
封装: ROHS COMPLIANT, SMB, SIMILAR TO DO-214AA, 2 PIN
文件页数: 1/5页
文件大小: 89K
代理商: MBRS130TRPBF
Document Number: 94318
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 15-Aug-08
1
Schottky Rectifier, 1.0 A
MBRS130TRPbF
Vishay High Power Products
FEATURES
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead (Pb)-free (“PbF” suffix)
Designed and qualified for industrial level
DESCRIPTION
The MBRS130TRPbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRODUCT SUMMARY
IF(AV)
1.0 A
VR
30 V
IRM
15 mA at 125 °C
Cathode
Anode
SMB
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
IF(AV)
Rectangular waveform
1.0
A
VRRM
30
V
IFSM
tp = 5 s sine
230
A
VF
1.0 Apk, TJ = 125 °C
0.42
V
TJ
Range
- 55 to 125
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
MBRS130TRPbF
UNITS
Maximum DC reverse voltage
VR
30
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
IF(AV)
50 % duty cycle at TL = 147 °C, rectangular waveform
1.0
A
Maximum peak one cycle
non-repetitive surge current, TJ = 25 °C
IFSM
5 s sine or 3 s rect. pulse
Following any rated
load condition and with
rated VRRM applied
870
10 ms sine or 6 ms rect. pulse
50
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 1 A, L = 6 mH
3.0
mJ
Repetitive avalanche current
IAR
Current decaying linearly to zero in 1 s
Frequency limited by TJ maximum VA = 1.5 x VR typical
1.0
A
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