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参数资料
| 型号： | MBRS2040LT3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | FAN COVER, SDR250; Length / Height, external:127mm; Width, external:81mm; Depth, external:30mm RoHS Compliant: Yes |
| 中文描述： | 2 A, 40 V, SILICON, RECTIFIER DIODE |
| 文件页数： | 1/4页 |
| 文件大小： | 134K |
| 代理商： | MBRS2040LT3 |
1
Rectifier Device Data
SMB Power Surface Mount Package
. . . employing the Schottky Barrier principle in a metal–to–silicon power
rectifier. Features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency switching power
supplies; free wheeling diodes and polarity protection diodes.
Compact Package with J–Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guardring for Over–Voltage Protection
Low Forward Voltage Drop
Mechanical Characteristics:
Case: Molded Epoxy
Epoxy Meets UL94, VO at 1/8
″
Weight: 95 mg (approximately)
Maximum Temperature of 260
°
C / 10 Seconds for Soldering
Polarity: Notch in Plastic Body Indicates Cathode Lead
Available in 12 mm Tape, 2500 Units per 13 inch Reel, Add “T3” Suffix to Part Number
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
Marking: BKJL
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
V
Average Rectified Forward Current (At Rated VR, TC = 103
°
C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 104
°
C)
IO
2.0
A
IFRM
4.0
A
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
IFSM
70
A
Storage / Operating Case Temperature
Tstg, TC
TJ
dv/dt
–55 to 150
°
C
Operating Junction Temperature
–55 to 125
°
C
Voltage Rate of Change (Rated VR, TJ = 25
°
C)
THERMAL CHARACTERISTICS
10,000
V/ s
Thermal Resistance – Junction–to–Lead (2)
Thermal Resistance – Junction–to–Ambient (3)
Rtjl
Rtja
22.5
78
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1), See Figure 2
VF
TJ = 25
°
C
0.43
0.50
TJ = 125
°
C
0.34
0.45
V
(IF = 2 A)
(IF = 4 A)
Maximum Instantaneous Reverse Current, See Figure 4
IR
TJ = 25
°
C
0.80
0.10
TJ = 100
°
C
20
6.0
mA
(VR = 40 V)
(VR = 20 V)
(1) Pulse Test: Pulse Width
≤
250
μ
s, Duty Cycle
≤
2.0%.
(2) Minimum pad size (0.108 X 0.085 inch) for each lead on FR4 board.
(3) 1 inch square pad size (1 X 0.5 inch for each lead) on FR4 board.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Order this document
by MBRS2040LT3/D
SEMICONDUCTOR TECHNICAL DATA
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES
40 VOLTS
CASE 403A–03
SMB
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRS2040LT3G | 功能描述:肖特基二极管与整流器 2A 40V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRS2040LT3G | 制造商:ON Semiconductor 功能描述:Schottky Rectifier |
| MBRS2040LT3G-CUT TAPE | 制造商:ON 功能描述:MBRS Series 2 A 40 V Surface Mount Schottky Power Rectifier - DO-214AA |
| MBRS2045CT | 功能描述:肖特基二极管与整流器 20A 45V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRS2050CT | 功能描述:肖特基二极管与整流器 20A 50V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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