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参数资料
| 型号： | MBRS2H100T3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 114K |
| 描述： | DIODE SCHOTTKY 2A 100V SMB |
| 产品目录绘图： | Rectifier SMB Pkg |
| 标准包装： | 1 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 100V |
| 电流 - 平均整流 (Io)： | 2A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 790mV @ 2A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 8µA @ 100V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AA，SMB |
| 供应商设备封装： | SMB |
| 包装： | 标准包装 |
| 产品目录页面： | 1568 (CN2011-ZH PDF) |
| 其它名称： | MBRS2H100T3GOSDKR |
MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G,
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
100
V
Average Rectified Forward Current
(TL
= 150
°C)
IO
2.0
A
Non?Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
130
A
Storage Temperature Range
Tstg
?65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
?65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t
he
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction?to?Lead (Note 2)
MBRA2H100T3G, NRVBA2H100T3G
MBRS2H100T3G, NBRS2H100T3G
JCL
14
12
°C/W
Thermal Resistance, Junction?to?Ambient (Note 2)
MBRA2H100T3G, NRVBA2H100T3G
MBRS2H100T3G, NBRS2H100T3G
RJA
75
71
°C/W
Thermal Resistance, Junction?to?Ambient (Note 3)
MBRA2H100T3G, NRVBA2H100T3G
MBRS2H100T3G, NBRS2H100T3G
RJA
275
230
°C/W
2. Mounted with 700 mm square copper pad size (Approximately 1 inch square) 1 oz FR4 Board.
3. Mounted with minimum recommended pad size 1 oz FR4 Board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
TJ
= 25
°C
TJ
= 125
°C
Maximum Instantaneous Forward Voltage
(Note 4)
(iF
= 2.0 A)
vF
0.79
0.65
V
Maximum Instantaneous Reverse Current (Note 4)
(VR
= 100 V)
IR
0.008
1.5
mA
4. Pulse Test: Pulse Width ≤
380
s, Duty Cycle ≤
2.0%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRS2H100T3G_09 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package |
| MBRS3045CT | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:30.0AMPS Surface Mount Schottky Barrier Rectifier |
| MBRS3045CT_11 | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:30.0AMPS Surface Mount Schottky Barrier Rectifier |
| MBRS3045CT-01 | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:30.0Amp Surface Mount Schottky Barrier Rectifier |
| MBRS30H45CT | 功能描述:肖特基二极管与整流器 30A,45V,DUAL SCHOTTKY Rect RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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