参数资料
型号: MBRS3100T3
厂商: ON Semiconductor
文件页数: 2/4页
文件大小: 122K
描述: DIODE SCHOTTKY 100V 3A SMC
产品变化通告: LTB Notification 03/Jan/2008
标准包装: 10
二极管类型: 肖特基
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 3A
电压 - 在 If 时为正向 (Vf)(最大): 790mV @ 3A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 50µA @ 100V
安装类型: 表面贴装
封装/外壳: DO-214AB,SMC
供应商设备封装: SMC
包装: 剪切带 (CT)
工具箱: SCHOTTRECA-KIT-ND - KIT SCHOTTKY RECT SMD SAMPLE
其它名称: MBRS3100T3OSCT
MBRS3100T3G, NRVBS3100T3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
100
V
Average Rectified Forward Current
(At Rated VR, TL
= 100
?C)
IF(AV)
3.0
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
130
A
Operating Junction Temperature Range (Note 1)
TJ
?
65 to +175
?C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t
he
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction?to?Lead
RJL
11
?C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF
= 3.0 A, T
J
= 25
?C)
(iF
= 6.0 A, T
J
= 25
?C)
(iF
= 3.0 A, T
J
= 125
?C)
(iF
= 6.0 A, T
J
= 125
?C)
VF
0.79
0.90
0.62
0.70
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ
= 25
?C)
(Rated dc Voltage, TJ
= 125
?C)
iR
0.05
5.0
mA
2. Pulse Test: Pulse Width = 300 s, Duty Cycle ?
2.0%.
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