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参数资料
| 型号： | MBRS3200T3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 96K |
| 描述： | DIODE SCHOTTKY 3A 200V SMB |
| 产品目录绘图： | Rectifier SMB Pkg |
| 标准包装： | 1 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 200V |
| 电流 - 平均整流 (Io)： | 3A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 840mV @ 3A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 1mA @ 200V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AA，SMB |
| 供应商设备封装： | SMB |
| 包装： | 标准包装 |
| 产品目录页面： | 1568 (CN2011-ZH PDF) |
| 其它名称： | MBRS3200T3GOSDKR |
MBRS3200T3G, NRVBS3200T3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
200
V
Average Rectified Forward Current (TL
= 150
°C)
IF(AV)
3.0
A
Non?Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
100
A
Operating Junction Temperature
TJ
?65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t
he
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction?to?Lead (Note 1)
Thermal Resistance, Junction?to?Ambient (Note 2)
RJL
RJA
13
62
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
(IF
= 3.0 A, T
J
= 25
°C)
(IF
= 4.0 A, T
J
= 25
°C)
(IF
= 3.0 A, T
J
= 150
°C)
VF
0.84
0.86
0.59
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TJ
= 25
°C)
(Rated dc Voltage, TJ
= 150
°C)
IR
1.0
5.0
mA
mA
1. Minimum pad size (0.108 ×
0.085 inch) for each lead on FR4 board.
2. 1 inch square pad size (1 ×
0.5 inch) for each lead on FR4 board.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
100
1
0.1
0.2 0.3 0.4 0.5 0.6 0.7
0.8 0.9 1.1 1.31.0
1.2
VF, FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
10
I
F
, FORWARD CURRENT (A)
TA
= 25
°C
TA
= 150
°C
100
1
0.1
0.2 0.3 0.4 0.5 0.6 0.7
0.8 0.9 1.1 1.31.0
1.2
VF, FORWARD VOLTAGE (V)
10
I
F
, FORWARD CURRENT (A)
TA
= 25
°C
TA
= 150
°C
TA
= 175
°C
TA
= 175
°C
TA
= 100
°C
TA
= 100
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRS3200T3G | 制造商:ON Semiconductor 功能描述:SCHOTTKY RECTIFIER 3A 200V 403A |
| MBRS3201 | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:SCHOTTKY FAST SOFTRECOVERY RECOVERY POWER RECTIFIER |
| MBRS3201T3 | 功能描述:肖特基二极管与整流器 3A 200V Soft RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRS3201T3_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:200V, 3A Schottky Fast Soft−Recovery Power Rectifier SMC Power Surface Mount Package |
| MBRS3201T3G | 功能描述:肖特基二极管与整流器 3A 200V Soft Recovery RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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