- 您现在的位置：买卖IC网 > Datasheet目录135 > MBRS360T3G (ON Semiconductor)DIODE SCHOTTKY 60V 3A SMC Datasheet资料下载
参数资料
| 型号： | MBRS360T3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 111K |
| 描述： | DIODE SCHOTTKY 60V 3A SMC |
| 产品目录绘图： | Rectifier SMC Pkg |
| 标准包装： | 10 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 60V |
| 电流 - 平均整流 (Io)： | 4A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 740mV @ 3A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 150µA @ 60V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AB，SMC |
| 供应商设备封装： | SMC |
| 包装： | 标准包装 |
| 产品目录页面： | 1568 (CN2011-ZH PDF) |
| 其它名称： | MBRS360T3GOSDKR |
MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
60
V
Average Rectified Forward Current
IF(AV)
3.0 @ TL
= 137
°C
4.0 @ TL
= 127
°C
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
125
A
Storage Temperature Range
Tstg
?
65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
?
65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction?to?Lead (Note 2)
SMC Package
SMB Package
RJL
11
15
°C/W
Thermal Resistance, Junction?to?Ambient (Note 2)
SMC Package
SMB Package
RJA
136
145
°C/W
Thermal Resistance, Junction?to?Ambient (Note 3)
SMC Package
SMB Package (Note 4)
RJA
71
73
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 5)
(iF
= 3.0 A, T
J
= 25
°C)
VF
0.63
V
Maximum Instantaneous Reverse Current (Note 5)
(Rated dc Voltage, TJ
= 25
°C)
(Rated dc Voltage, TJ
= 100
°C)
iR
0.03
3.0
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise
noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with minimum recommended pad size, PC Board FR4.
3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
4. Typical Value; 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
5. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
I
F
, INSTANTANEOUS FORWARD
CURRENT (A)
TJ
= 25
°C
TJ
= 150
°C
TJ
= 100
°C
TJ
=
?40°C
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
TJ
= 25
°C
TJ
= 150
°C
TJ
= 100
°C
TJ
=
?40°C
0.010.0 0.2 0.4 0.6 0.8
0.1
1
10
TJ
= 175
°C
0.010.0 0.2 0.4 0.6 0.8
0.1
1
10
I
F
, INSTANTANEOUS FORWARD
CURRENT (A)
TJ
= 175
°C
相关PDF资料 |
PDF描述 |
|---|---|
| MBRS410ET3G | DIODE SCHOTTKY 10V 4A SMC |
| MBRS410LT3G | DIODE SCHOTTKY 10V 4A SMC |
| MBRS4201T3 | DIODE SCHOTTKY 4A 200V SMC |
| MI3035S-E3/4W | DIODE SCHOTT 30A 35V SGL TO220-3 |
| MMBD1401A | DIODE 175V 200MA SOT23 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRS360T3G-CUT TAPE | 制造商:ON 功能描述:MBRS360T3 Series 60 V 125 A Surface Mount Schottky Power Rectifier - CASE 403 |
| MBRS360TR | 功能描述:肖特基二极管与整流器 3.0 Amp 60 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRS360TR | 制造商:Vishay Semiconductors 功能描述:DIODE SCHOTTKY 3A 60V |
| MBRS360TRPBF | 功能描述:DIODE SCHOTTKY 60V 3A SMC RoHS:是 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879 |
| MBRS360TRPBF_10 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 3.0 A |
发布紧急采购，3分钟左右您将得到回复。