参数资料
型号: MBRS4201T3
厂商: ON Semiconductor
文件页数: 2/5页
文件大小: 124K
描述: DIODE SCHOTTKY 4A 200V SMC
产品变化通告: Product Discontinuation 27/Jun/2007
标准包装: 2,500
二极管类型: 肖特基
电压 - (Vr)(最大): 200V
电流 - 平均整流 (Io): 4A
电压 - 在 If 时为正向 (Vf)(最大): 860mV @ 4A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 35ns
电流 - 在 Vr 时反向漏电: 1mA @ 200V
安装类型: 表面贴装
封装/外壳: DO-214AB,SMC
供应商设备封装: SMC
包装: 带卷 (TR)
MBRS4201T3G, NRVBS4201T3G
http://onsemi.com
2
MAXIMUM RATINGS
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
200
V
Average Rectified Forward Current
(Rated VR, TL
= 70
?C)
IF(AV)
4
A
Nonrepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
100
A
Operating Junction Temperature
TJ
?55 to +150
?C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t
he
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction?to?Lead
RJL
11
?C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage
(IF
= 4 A, T
J
= 25
?C)
(IF
= 4 A, T
J
= 150
?C)
VF
0.86
0.61
V
Maximum Instantaneous Reverse Current (Rated VR)
(Rated DC Voltage, TJ
= 25
?C)
(Rated DC Voltage, TJ
= 150
?C)
IR
1.0
5.0
mA
mA
Maximum Reverse Recovery Time
(IF
= 1.0 A, di/dt = 100 A/
s, VR
= 30 V)
trr
35
ns
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