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参数资料
| 型号： | MC-4516CA727XFA-A75 |
| 厂商： | ELPIDA MEMORY INC |
| 元件分类： | DRAM |
| 英文描述： | CAP 1.5UF 600VDC POLY FILM AXIAL |
| 中文描述： | 16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 |
| 封装： | DIMM-168 |
| 文件页数： | 10/13页 |
| 文件大小： | 169K |
| 代理商： | MC-4516CA727XFA-A75 |
EOL
Product
Data Sheet E0231N20 (Ver. 2.0)
6
MC-4516CA727XFA
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
-A75
Parameter
Symbol
Test condition
MIN.
MAX.
Unit
Notes
Operating current
ICC1
Burst length = 1
/CAS latency = 2
900
mA
1
tRC
≥ tRC(MIN.), IO = 0 mA
/CAS latency = 3
945
Precharge standby current in
ICC2P
CKE
≤ VIL(MAX.), tCK = 15 ns
9
mA
power down mode
ICC2PS
CKE
≤ VIL(MAX.), tCK = ∞
9
Precharge standby current
in non power down mode
ICC2N
CKE
≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.),
Input signals are changed one time during 30 ns.
180
mA
ICC2NS
CKE
≥ VIH(MIN.), tCK = ∞
Input signals are stable.
72
Active standby current in
ICC3P
CKE
≤ VIL(MAX.), tCK = 15 ns
45
mA
power down mode
ICC3PS
CKE
≤ VIL(MAX.), tCK = ∞
36
Active standby current in
ICC3N
CKE
≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.),
270
mA
non power down mode
Input signals are changed one time during 30 ns.
ICC3NS
CKE
≥ VIH(MIN.), tCK = ∞,
Input signals are stable.
180
Operating current (Burst mode)
ICC4
tCK
≥ tCK(MIN.), IO = 0 mA
/CAS latency = 2
1,080
mA
2
/CAS latency = 3
1,395
CBR (Auto) refresh current
ICC5
tRC
≥ tRC(MIN.)
/CAS latency = 2
2,070
mA
3
/CAS latency = 3
2,160
Self refresh current
ICC6
CKE
≤ 0.2 V
18
mA
Input leakage current
II(L)
VI = 0 to 3.6 V, All other pins not under test = 0 V
– 9
+ 9
A
Output leakage current
IO(L)
DOUT is disabled, VO = 0 to 3.6 V
– 1.5
+ 1.5
A
High level output voltage
VOH
IO = – 4 mA
2.4
V
Low level output voltage
VOL
IO = + 4 mA
0.4
V
Notes 1. ICC1 depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, ICC1 is measured on condition that addresses are changed only one time during tCK (MIN.).
2. ICC4 depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, ICC4 is measured on condition that addresses are changed only one time during tCK (MIN.).
3. ICC5 is measured on condition that addresses are changed only one time during tCK (MIN.).
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相关代理商/技术参数 |
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| MC-4516CB646 | 制造商:NEC 制造商全称:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-4516CB646EF-A10 | 制造商:NEC 制造商全称:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-4516CB646EF-A80 | 制造商:ELPIDA 制造商全称:Elpida Memory 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-4516CB646PF-A10 | 制造商:NEC 制造商全称:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-4516CB646PF-A80 | 制造商:NEC 制造商全称:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
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