参数资料
型号: MC-4532CC727XFA-A75
厂商: ELPIDA MEMORY INC
元件分类: DRAM
英文描述: 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
中文描述: 32M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
封装: DIMM-168
文件页数: 11/14页
文件大小: 176K
代理商: MC-4532CC727XFA-A75
EOL
Product
6
MC-4532CC727XFA
Data Sheet E0229N20 (Ver. 2.0)
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
-A75
Parameter
Symbol
Test condition
MIN.
MAX.
Unit
Notes
Operating current
ICC1
Burst length = 1
/CAS latency = 2
1,170
mA
1
tRC
≥ tRC(MIN.), IO = 0 mA
/CAS latency = 3
1,215
Precharge standby current in
ICC2P
CKE
≤ VIL(MAX.), tCK = 15 ns
18
mA
power down mode
ICC2PS CKE
≤ VIL(MAX.), tCK = ∞
18
Precharge standby current in
non power down mode
ICC2N
CKE
≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.),
Input signals are changed one time during
30 ns.
360
mA
ICC2NS CKE
≥ VIH(MIN.), tCK = ∞ Input
signals are stable.
144
Active standby current in
ICC3P
CKE
≤ VIL(MAX.), tCK = 15 ns
90
mA
power down mode
ICC3PS CKE
≤ VIL(MAX.), tCK = ∞
72
Active standby current in non
power down mode
ICC3N
CKE
≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.),
Input signals are changed one time during
30 ns.
540
mA
ICC3NS
CKE
≥ VIH(MIN.), tCK = ∞, Input signals are stable.
360
mA
Operating current
ICC4
tCK
≥ tCK(MIN.)
/CAS latency = 2
1,350
mA
2
(Burst mode)
IO = 0 mA
/CAS latency = 3
1,665
CBR (Auto) refresh current
ICC5
tRC
≥ tRC(MIN.)
/CAS latency = 2
2,340
mA
3
/CAS latency = 3
2,430
Self refresh current
ICC6
CKE
≤ 0.2 V
36
mA
Input leakage current
II(L)
VI = 0 to 3.6 V, All other pins not under
test = 0 V
– 18
+ 18
A
CKE1
– 500
+500
Output leakage current
IO(L)
DOUT is disabled, VO = 0 to 3.6 V
– 3
+ 3
A
High level output voltage
VOH
IO = – 4.0 mA
2.4
V
Low level output voltage
VOL
IO = + 4.0 mA
0.4
V
Notes 1. ICC1 depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, ICC1 is measured on condition that addresses are changed only one time during tCK (MIN.).
2. ICC4 depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, ICC4 is measured on condition that addresses are changed only one time during tCK (MIN.).
3. ICC5 is measured on condition that addresses are changed only one time during tCK (MIN.).
相关PDF资料
PDF描述
MC-4532CD647XFA-A75 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4532DA727XFA-A75 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4R512FKE8D-845 Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
MC-4R512FKK6K 512MB 32-bit Direct Rambus DRAM RIMM Module
MC-7893 1 GHz CATV 23 dB POWER DOUBLER AMPLIFIER
相关代理商/技术参数
参数描述
MC-4532CD646 制造商:NEC 制造商全称:NEC 功能描述:32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4532CD646EF-A10 制造商:NEC 制造商全称:NEC 功能描述:32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4532CD646EF-A80 制造商:NEC 制造商全称:NEC 功能描述:32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4532CD646PF-A10 制造商:NEC 制造商全称:NEC 功能描述:32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4532CD646PF-A80 制造商:NEC 制造商全称:NEC 功能描述:32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE