参数资料
型号: MC100EP05DG
厂商: ON Semiconductor
文件页数: 7/11页
文件大小: 0K
描述: IC GATE AND/NAND ECL 2INP 8SOIC
标准包装: 98
系列: 100EP
逻辑类型: 与/与非门
电路数: 1
输入数: 2 输入(1,1)
施密特触发器输入:
输出类型: 差分
电源电压: 3 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 管件
其它名称: MC100EP05DGOS
MC10EP05, MC100EP05
http://onsemi.com
5
Table 8. 100EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 12)
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
15
25
32
17
27
36
19
28
38
mA
VOH
Output HIGH Voltage (Note 13)
2155
2280
2405
2155
2280
2405
2155
2280
2405
mV
VOL
Output LOW Voltage (Note 13)
1355
1480
1605
1355
1480
1605
1355
1480
1605
mV
VIH
Input HIGH Voltage (SingleEnded)
2075
2420
2075
2420
2075
2420
mV
VIL
Input LOW Voltage (SingleEnded)
1355
1675
1355
1675
1355
1675
mV
VIHCMR
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 14)
2.0
3.3
2.0
3.3
2.0
3.3
V
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
D
0.5
150
0.5
150
0.5
150
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
12.Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to 2.2 V.
13.All loading with 50 W to VCC 2.0 V.
14.VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
Table 9. 100EP DC CHARACTERISTICS, PECL VCC = 5.0 V, VEE = 0 V (Note 15)
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
15
25
32
17
27
36
19
28
38
mA
VOH
Output HIGH Voltage (Note 16)
3855
3980
4105
3855
3980
4105
3855
3980
4105
mV
VOL
Output LOW Voltage (Note 16)
3055
3180
3305
3055
3180
3305
3055
3180
3305
mV
VIH
Input HIGH Voltage (SingleEnded)
3775
4120
3775
4120
3775
4120
mV
VIL
Input LOW Voltage (SingleEnded)
3055
3375
3055
3375
3055
3375
mV
VIHCMR
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 17)
2.0
5.0
2.0
5.0
2.0
5.0
V
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
D
0.5
150
0.5
150
0.5
150
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
15.Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to 0.5 V.
16.All loading with 50 W to VCC 2.0 V.
17.VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
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MC100EP05DG 制造商:ON Semiconductor 功能描述:AND/NAND GATE LOGIC IC
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