参数资料
型号: MC100EP105FAR2G
厂商: ON Semiconductor
文件页数: 6/11页
文件大小: 0K
描述: IC GATE AND/NAND QUAD 2IN 32LQFP
标准包装: 2,000
系列: 100EP
逻辑类型: 与/与非门
电路数: 4
输入数: 8 输入(2,2,2,2)
施密特触发器输入:
输出类型: 差分
电源电压: 3 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 32-LQFP
供应商设备封装: 32-LQFP(7x7)
包装: 带卷 (TR)
其它名称: MC100EP105FAR2GOS
MC10EP105, MC100EP105
http://onsemi.com
4
Table 5. 10EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 2)
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
45
58
75
45
59
75
45
60
75
mA
VOH
Output HIGH Voltage (Note 3)
2165
2290
2415
2230
2355
2480
2290
2415
2540
mV
VOL
Output LOW Voltage (Note 3)
1365
1490
1615
1430
1555
1680
1490
1615
1740
mV
VIH
Input HIGH Voltage (SingleEnded)
2090
2415
2155
2480
2215
2540
mV
VIL
Input LOW Voltage (SingleEnded)
1365
1690
1460
1755
1490
1815
mV
VIHCMR
Input HIGH Voltage Common Mode Range
(Differential Configuration) (Note 4)
2.0
3.3
2.0
3.3
2.0
3.3
V
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to 2.2 V.
3. All loading with 50 W to VCC 2.0 V.
4. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
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