参数资料
| 型号： | MC100EP11DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/12页 |
| 文件大小： | 0K |
| 描述： | IC CLOCK BUFFER 1:2 3GHZ 8-SOIC |
| 标准包装： | 2,500 |
| 系列： | 100EP |
| 类型： | 扇出缓冲器（分配） |
| 电路数： | 1 |
| 比率 - 输入:输出： | 1:2 |
| 差分 - 输入:输出： | 是/是 |
| 输入： | ECL，PECL |
| 输出： | ECL，PECL |
| 频率 - 最大： | 3GHz |
| 电源电压： | 3 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | MC100EP11DR2G-ND MC100EP11DR2GOSTR |
MC10EP11, MC100EP11
http://onsemi.com
3
Table 3. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
VCC
PECL Mode Power Supply
VEE = 0 V
6
V
VEE
NECL Mode Power Supply
VCC = 0 V
6
V
VI
PECL Mode Input Voltage
NECL Mode Input Voltage
VEE = 0 V
VCC = 0 V
VI v VCC
VI w VEE
6
V
Iout
Output Current
Continuous
Surge
50
100
mA
TA
Operating Temperature Range
40 to +85
°C
Tstg
Storage Temperature Range
65 to +150
°C
qJA
Thermal Resistance (JunctiontoAmbient)
0 lfpm
500 lfpm
SOIC8
190
130
°C/W
qJC
Thermal Resistance (JunctiontoCase)
Standard Board
SOIC8
41 to 44
°C/W
qJA
Thermal Resistance (JunctiontoAmbient)
0 lfpm
500 lfpm
TSSOP8
185
140
°C/W
qJC
Thermal Resistance (JunctiontoCase)
Standard Board
TSSOP8
41 to 44
°C/W
qJA
Thermal Resistance (JunctiontoAmbient)
0 lfpm
500 lfpm
DFN8
129
84
°C/W
Tsol
Wave Solder
Pb
PbFree
<2 to 3 sec @ 248°C
<2 to 3 sec @ 260°C
265
°C
qJC
Thermal Resistance (JunctiontoCase)
(Note 2)
DFN8
35 to 40
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. JEDEC standard multilayer board 2S2P (2 signal, 2 power)
Symbol
Characteristic
40°C
25°C
85°C
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Negative Power Supply Current
20
29
37
20
30
39
22
31
40
mA
VOH
Output HIGH Voltage (Note 4)
2165
2290
2415
2230
2355
2480
2290
2415
2540
mV
VOL
Output LOW Voltage (Note 4)
1365
1490
1615
1430
1555
1680
1490
1615
1740
mV
VIH
Input HIGH Voltage (SingleEnded)
2090
2415
2155
2480
2215
2540
mV
VIL
Input LOW Voltage (SingleEnded)
1365
1690
1430
1755
1490
1815
mV
VIHCMR
Input HIGH Voltage Common Mode
Range (Differential Configuration) (Note 5)
2.0
3.3
2.0
3.3
2.0
3.3
V
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
D
0.5
150
0.5
150
0.5
150
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to 2.2 V.
4. All loading with 50 W to VCC 2.0 V.
5. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
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| MC100EP11DR2GH | 制造商:ON Semiconductor 功能描述:1:2 FANOUT BUFFER - Tape and Reel |
| MC100EP11DT | 功能描述:时钟缓冲器 3.3V/5V ECL 1:2 Diff RoHS:否 制造商:Texas Instruments 输出端数量:5 最大输入频率:40 MHz 传播延迟（最大值）: 电源电压-最大:3.45 V 电源电压-最小:2.375 V 最大功率耗散: 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:LLP-24 封装:Reel |
| MC100EP11DTG | 功能描述:时钟缓冲器 3.3V/5V ECL 1:2 Diff Fanout Buffer RoHS:否 制造商:Texas Instruments 输出端数量:5 最大输入频率:40 MHz 传播延迟（最大值）: 电源电压-最大:3.45 V 电源电压-最小:2.375 V 最大功率耗散: 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:LLP-24 封装:Reel |
| MC100EP11DTG | 制造商:ON Semiconductor 功能描述:CLOCK GENERATOR / DISTRIBUTOR LOGIC IC |
| MC100EP11DTR2 | 功能描述:时钟缓冲器 3.3V/5V ECL 1:2 Diff RoHS:否 制造商:Texas Instruments 输出端数量:5 最大输入频率:40 MHz 传播延迟（最大值）: 电源电压-最大:3.45 V 电源电压-最小:2.375 V 最大功率耗散: 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:LLP-24 封装:Reel |
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