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参数资料
| 型号： | MC100EP16TMNR4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/11页 |
| 文件大小： | 0K |
| 描述： | IC RCVR/DRVR 3.3/5 DIFF ECL 8DFN |
| 标准包装： | 1,000 |
| 系列： | 100EP |
| 逻辑类型： | 差分接收器/驱动器 |
| 电源电压： | 3 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VFDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN（2x2） |
| 包装： | 带卷 (TR) |
MC10EP16T, MC100EP16T
http://onsemi.com
3
Table 3. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
VCC
PECL Mode Power Supply
VEE = 0 V
6
V
VEE
NECL Mode Power Supply
VCC = 0 V
6
V
VI
PECL Mode Input Voltage
NECL Mode Input Voltage
VEE = 0 V
VCC = 0 V
VI v VCC
VI w VEE
6
V
Iout
Output Current
Continuous
Surge
50
100
mA
IBB
VBB Sink/Source
± 0.5
mA
TA
Operating Temperature Range
40 to +85
°C
Tstg
Storage Temperature Range
65 to +150
°C
qJA
Thermal Resistance (JunctiontoAmbient)
0 lfpm
500 lfpm
SOIC8
190
130
°C/W
qJC
Thermal Resistance (JunctiontoCase)
Standard Board
SOIC8
41 to 44
°C/W
qJA
Thermal Resistance (JunctiontoAmbient)
0 lfpm
500 lfpm
TSSOP8
185
140
°C/W
qJC
Thermal Resistance (JunctiontoCase)
Standard Board
TSSOP8
41 to 44
°C/W
qJA
Thermal Resistance (JunctiontoAmbient)
0 lfpm
500 lfpm
DFN8
129
84
°C/W
Tsol
Wave Solder
Pb
PbFree
265
°C
qJC
Thermal Resistance (JunctiontoCase)
(Note 2)
DFN8
35 to 40
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. JEDEC standard multilayer board 2S2P (2 signal, 2 power)
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
16
23
31
16
23
31
16
23
31
mA
VOH
Output HIGH Voltage (Note 4)
2165
2290
2415
2230
2355
2480
2290
2415
2540
mV
VOL
Output LOW Voltage (Note 4)
1365
1490
1615
1430
1555
1680
1490
1615
1740
mV
VIH
Input HIGH Voltage (SingleEnded)
2090
2415
2155
2480
2215
2540
mV
VIL
Input LOW Voltage (SingleEnded)
1365
1690
1430
1755
1490
1815
mV
VIHCMR
Input HIGH Voltage Common Mode Range
(Differential Configuration) (Note 5)
2.0
3.3
2.0
3.3
2.0
3.3
V
RT
Internal Termination Resistor
43
57
43
50
57
43
57
W
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
150
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to 2.2 V.
4. All loading with 50 W to VCC 2.0 V.
5. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MC100EP16VA | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:3.3V / 5V ECL Differential Receiver/Driver with High Gain |
| MC100EP16VAD | 功能描述:总线收发器 3.3V/5V ECL Diff RoHS:否 制造商:Fairchild Semiconductor 逻辑类型:CMOS 逻辑系列:74VCX 每芯片的通道数量:16 输入电平:CMOS 输出电平:CMOS 输出类型:3-State 高电平输出电流:- 24 mA 低电平输出电流:24 mA 传播延迟时间:6.2 ns 电源电压-最大:2.7 V, 3.6 V 电源电压-最小:1.65 V, 2.3 V 最大工作温度:+ 85 C 封装 / 箱体:TSSOP-48 封装:Reel |
| MC100EP16VADG | 功能描述:总线收发器 3.3V/5V ECL Diff RoHS:否 制造商:Fairchild Semiconductor 逻辑类型:CMOS 逻辑系列:74VCX 每芯片的通道数量:16 输入电平:CMOS 输出电平:CMOS 输出类型:3-State 高电平输出电流:- 24 mA 低电平输出电流:24 mA 传播延迟时间:6.2 ns 电源电压-最大:2.7 V, 3.6 V 电源电压-最小:1.65 V, 2.3 V 最大工作温度:+ 85 C 封装 / 箱体:TSSOP-48 封装:Reel |
| MC100EP16VADG | 制造商:ON Semiconductor 功能描述:IC - DRIVER/ RECEIVER |
| MC100EP16VADR2 | 功能描述:总线收发器 3.3V/5V ECL Diff RoHS:否 制造商:Fairchild Semiconductor 逻辑类型:CMOS 逻辑系列:74VCX 每芯片的通道数量:16 输入电平:CMOS 输出电平:CMOS 输出类型:3-State 高电平输出电流:- 24 mA 低电平输出电流:24 mA 传播延迟时间:6.2 ns 电源电压-最大:2.7 V, 3.6 V 电源电压-最小:1.65 V, 2.3 V 最大工作温度:+ 85 C 封装 / 箱体:TSSOP-48 封装:Reel |
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