参数资料
型号: MC100EP16VADTG
厂商: ON Semiconductor
文件页数: 8/11页
文件大小: 0K
描述: IC RCVR/DRVR ECL DIFF 5V 8TSSOP
标准包装: 100
系列: 100EP
逻辑类型: 差分接收器/驱动器
电源电压: 3 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-TSSOP,8-MSOP(0.118",3.00mm 宽)
供应商设备封装: 8-TSSOP
包装: 管件
其它名称: MC100EP16VADTGOS
MC10EP16VA, MC100EP16VA
http://onsemi.com
6
Table 9. 100EP DC CHARACTERISTICS, NECL VCC = 0 V; VEE = 5.5 V to 3.0 V (Note 18)
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
22
28
36
24
30
40
26
32
42
mA
VOH
Output HIGH Voltage (Note 19)
1145 1020
895
1145 1020
895
1145 1020
895
mV
VOL
Output LOW Voltage (Note 19)
1995 1870 1745 1995 1870 1745 1995 1870 1745
mV
VIH
Input HIGH Voltage (SingleEnded)
1225
880
1225
880
1225
880
mV
VIL
Input LOW Voltage (SingleEnded)
1945
1625 1945
1625
mV
VBB
Output Voltage Reference
1525 1425 1325 1525 1425 1325 1525 1425 1325
mV
VIHCMR
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 20)
VEE+2.0
0.0
VEE+2.0
0.0
VEE+2.0
0.0
V
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
18.Input and output parameters vary 1:1 with VCC.
19.All loading with 50 W to VCC 2.0 V.
20.VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
Table 10. AC CHARACTERISTICS VCC = 0 V; VEE = 3.0 V to 5.5 V or VCC = 3.0 V to 5.5 V; VEE = 0 V (Note 21)
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max Unit
fmax
Maximum Frequency
(See Figure 2 Fmax/JITTER)
> 3
GHz
tPLH,
tPHL
Propagation Delay to
Output Differential
200
260
320
220
270
340
250
320
390
ps
tSKEW
Duty Cycle Skew (Note 22)
5.0
20
5.0
20
5.0
20
ps
tJITTER
CycletoCycle Jitter
(See Figure 2 Fmax/JITTER)
0.2
< 1
0.2
< 1
0.2
< 1
ps
VPP
Input Voltage Swing (Differential Configuration)
(See Figure 3)
20
800
120
0
20
800
120
0
20
800
120
0
mV
tr
tf
Output Rise/Fall Times
Q, Q
(20% 80%)
70
110
170
80
110
180
80
120
200
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
21.Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to VCC2.0 V.
22.Skew is measured between outputs under identical transitions. Duty cycle skew is defined only for differential operation when the delays
are measured from the cross point of the inputs to the cross point of the outputs.
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