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参数资料
| 型号： | MC100EP16VBDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/10页 |
| 文件大小： | 0K |
| 描述： | IC RCVR/DRVR 5V DIFF ECL 8-SOIC |
| 标准包装： | 2,500 |
| 系列： | 100EP |
| 逻辑类型： | 差分接收器/驱动器 |
| 电源电压： | 3 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
MC100EP16VB
http://onsemi.com
4
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
27
37
47
22
30
38
24
32
40
mA
VOH
Output HIGH Voltage (Note 7)
3855
3980
4105
3855
3980
4105
3855
3980
4105
mV
VOL
Output LOW Voltage (Note 7)
3005
3130
3255
3005
3100
3255
3005
3080
3255
mV
VIH
Input HIGH Voltage (SingleEnded)
3775
4120
3775
4120
3775
4120
mV
VIL
Input LOW Voltage (SingleEnded)
3055
3375
3055
3375
3055
3375
mV
VBB
Output Voltage Reference
3475
3575
3675
3475
3575
3675
3475
3575
3675
mV
VIHCMR
Input HIGH Voltage Common Mode Range
(Differential Configuration) (Note 8)
2.0
5.0
2.0
5.0
2.0
5.0
V
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
6. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to 0.5 V.
7. All loading with 50 W to VCC 2.0 V.
8. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
27
37
47
22
30
38
24
32
40
mA
VOH
Output HIGH Voltage (Note 10)
1145 1020
895
1145 1020
895
1145 1020
895
mV
VOL
Output LOW Voltage (Note 10)
1995 1870 1745 1995 1900 1745 1995 1920 1745
mV
VIH
Input HIGH Voltage (SingleEnded)
1225
880
1225
880
1225
880
mV
VIL
Input LOW Voltage (SingleEnded)
1945
1625 1945
1625
mV
VBB
Output Voltage Reference
1525 1425 1325 1525 1425 1325 1525 1425 1325
mV
VIHCMR
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 11)
VEE + 2.0
0.0
VEE + 2.0
0.0
VEE + 2.0
0.0
V
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
9. Input and output parameters vary 1:1 with VCC.
10.All loading with 50 W to VCC 2.0 V.
11. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
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| MC100EP16VBDTR2 | 功能描述:总线收发器 3.3V/5V ECL with RoHS:否 制造商:Fairchild Semiconductor 逻辑类型:CMOS 逻辑系列:74VCX 每芯片的通道数量:16 输入电平:CMOS 输出电平:CMOS 输出类型:3-State 高电平输出电流:- 24 mA 低电平输出电流:24 mA 传播延迟时间:6.2 ns 电源电压-最大:2.7 V, 3.6 V 电源电压-最小:1.65 V, 2.3 V 最大工作温度:+ 85 C 封装 / 箱体:TSSOP-48 封装:Reel |
| MC100EP16VBDTR2G | 功能描述:总线收发器 3.3V/5V ECL with High and Low Gain RoHS:否 制造商:Fairchild Semiconductor 逻辑类型:CMOS 逻辑系列:74VCX 每芯片的通道数量:16 输入电平:CMOS 输出电平:CMOS 输出类型:3-State 高电平输出电流:- 24 mA 低电平输出电流:24 mA 传播延迟时间:6.2 ns 电源电压-最大:2.7 V, 3.6 V 电源电压-最小:1.65 V, 2.3 V 最大工作温度:+ 85 C 封装 / 箱体:TSSOP-48 封装:Reel |
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