参数资料
型号: MC100EP446MNR4G
厂商: ON Semiconductor
文件页数: 17/20页
文件大小: 0K
描述: IC CONV PAR/SER 8BIT DIFF 32-QFN
标准包装: 1,000
应用: 数据管理
接口: 差分
电源电压: 3 V ~ 5.5 V
封装/外壳: 32-VFQFN 裸露焊盘
供应商设备封装: 32-QFN(5x5)
包装: 带卷 (TR)
安装类型: 表面贴装
MC10EP446, MC100EP446
http://onsemi.com
6
Table 7. 10EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 2)
Symbol
Characteristic
40°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
IEE
Power Supply Current
90
110
140
90
110
140
95
115
145
mA
VOH
Output HIGH Voltage (Note 3)
2165 2290 2415 2230 2355 2480 2290 2415 2540
mV
VOL
Output LOW Voltage (Note 3)
1365 1490 1615 1430 1555 1680 1490 1615 1740
mV
VIH
Input HIGH Voltage (SingleEnded)
CMOS
PECL
TTL
2000
2090
2000
3300
2000
2155
2000
3300
2000
2215
2000
3300
mV
VIL
Input LOW Voltage (SingleEnded)
CMOS
PECL
TTL
0
1365
0
800
1690
800
0
1460
0
800
1755
800
0
1490
0
800
1815
800
mV
VBB
Output Voltage Reference
1790 1840 1990 1855 1905 2055 1915 1965 2115
mV
VIHCMR
Input HIGH Voltage Common Mode Range (Dif-
ferential Configuration) (Note 4)
2.0
3.3
2.0
3.3
2.0
3.3
V
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
(All Except SYNC, SYNC)
SYNC, SYNC
0.5
150
0.5
150
0.5
150
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to 2.2 V.
3. All loading with 50 W to VCC 2.0 V.
4. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
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