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参数资料
| 型号： | MC10E212 |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | 0.345A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC 0 to 85 |
| 中文描述： | 3位扫描的注册地址驱动 |
| 文件页数： | 3/4页 |
| 文件大小： | 111K |
| 代理商： | MC10E212 |
MC10E212 MC100E212
2–3
MOTOROLA
ECLinPS and ECLinPS Lite
DL140 — Rev 4
OUTLINE DIMENSIONS
FN SUFFIX
PLASTIC PLCC PACKAGE
CASE 776–02
ISSUE D
0.007 (0.180)
T L –M
S
N
S
M
0.007 (0.180)
T L –M
S
N
S
M
0.007 (0.180)
T L –M
S
N
S
M
0.010 (0.250)
T L –M
S
N
S
S
0.007 (0.180)
T L –M
S
N
S
M
0.010 (0.250)
T L –M
S
N
S
S
0.007 (0.180)
T L –M
S
N
S
M
0.007 (0.180)
T L –M
S
N
S
M
0.004 (0.100)
SEATING
PLANE
-T-
12.32
12.32
4.20
2.29
0.33
0.66
0.51
0.64
11.43
11.43
1.07
1.07
1.07
—
2
°
10.42
1.02
12.57
12.57
4.57
2.79
0.48
0.81
—
—
11.58
11.58
1.21
1.21
1.42
0.50
10
°
10.92
—
1.27 BSC
A
B
C
E
F
G
H
J
K
R
U
V
W
X
Y
Z
G1
K1
MIN
0.485
0.485
0.165
0.090
0.013
MIN
MAX
0.495
0.495
0.180
0.110
0.019
MAX
INCHES
MILLIMETERS
DIM
NOTES:
1. DATUMS -L-, -M-, AND -N- DETERMINED
WHERE TOP OF LEAD SHOULDER EXITS
PLASTIC BODY AT MOLD PARTING LINE.
2. DIM G1, TRUE POSITION TO BE MEASURED
AT DATUM -T-, SEATING PLANE.
3. DIM R AND U DO NOT INCLUDE MOLD FLASH.
ALLOWABLE MOLD FLASH IS 0.010 (0.250)
PER SIDE.
4. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
5. CONTROLLING DIMENSION: INCH.
6. THE PACKAGE TOP MAY BE SMALLER THAN
THE PACKAGE BOTTOM BY UP TO 0.012
(0.300). DIMENSIONS R AND U ARE
DETERMINED AT THE OUTERMOST
EXTREMES OF THE PLASTIC BODY
EXCLUSIVE OF MOLD FLASH, TIE BAR
BURRS, GATE BURRS AND INTERLEAD
FLASH, BUT INCLUDING ANY MISMATCH
BETWEEN THE TOP AND BOTTOM OF THE
PLASTIC BODY.
7. DIMENSION H DOES NOT INCLUDE DAMBAR
PROTRUSION OR INTRUSION. THE DAMBAR
PROTRUSION(S) SHALL NOT CAUSE THE H
DIMENSION TO BE GREATER THAN 0.037
(0.940). THE DAMBAR INTRUSION(S) SHALL
NOT CAUSE THE H DIMENSION TO BE
SMALLER THAN 0.025 (0.635).
VIEW S
B
U
Z
G1
X
VIEW D-D
H
K
F
VIEW S
G
C
Z
A
R
E
J
0.026
0.020
0.025
0.450
0.450
0.042
0.042
0.042
—
2
°
0.410
0.040
0.032
—
—
0.456
0.456
0.048
0.048
0.056
0.020
10
°
0.430
—
0.050 BSC
-N-
Y BRK
D
D
W
-M-
-L-
28
1
V
G1
K1
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PDF描述 |
|---|---|
| MC10E212FN | 3-BIT SCANNABLE REGISTERED ADDRESS DRIVER |
| MC100E241FN | 8-BIT SCANNABLE REGISTER |
| MC10E241 | 0.345A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC 0 to 85 |
| MC10E241FN | 0.345A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC 0 to 85 |
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相关代理商/技术参数 |
参数描述 |
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| MC10E212FN | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MC10E212FNR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MC10E404FI | 制造商:ON Semiconductor 功能描述: |
| MC10E404FN | 功能描述:逻辑门 5V ECL Quad Diff RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
| MC10E404FNG | 功能描述:逻辑门 5V ECL Quad Diff AND/NAND RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
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