参数资料
| 型号： | MC10EL07DTR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IC GATE XOR/XNOR ECL 2IN 8-TSSOP |
| 标准包装： | 2,500 |
| 系列： | 10EL |
| 逻辑类型： | 异或/异或非门 |
| 电路数： | 1 |
| 输入数： | 2 |
| 施密特触发器输入： | 无 |
| 输出类型： | 差分 |
| 电源电压： | 4.2 V ~ 5.7 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 带卷 (TR) |
Semiconductor Components Industries, LLC, 2008
August, 2008 Rev. 7
1
Publication Order Number:
MC10EL07/D
MC10EL07, MC100EL07
5.0 VECL
2‐Input XOR/XNOR
The MC10EL/100EL07 is a 2-input XOR/XNOR gate. The device
is functionally equivalent to the E107 device with higher performance
capabilities. With propagation delays and output transition times
significantly faster than the E107, the EL07 is ideally suited for those
applications which require the ultimate in AC performance.
The 100 Series contains temperature compensation.
Features
260 ps Propagation Delay
ESD Protection: Human Body Model; > 1.0 KV
Machine Model; > 100 V
PECL Mode Operating Range: VCC = 4.2 V to 5.7 V
with VEE = 0 V
NECL Mode Operating Range: VCC = 0 V
with VEE = 4.2 V to 5.7 V
Internal Input Pulldown Resistors
Meets or Exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
Moisture Sensitivity Level 1
For Additional Information, see Application Note AND8003/D
Flammability Rating: UL 94 V0 @ 0.125 in,
Oxygen Index: 28 to 34
Transistor Count = 47 devices
PbFree Packages are Available
1
2
3
45
6
7
8
NC
D0
D1
NC
VEE
Q
VCC
Figure 1. Logic Diagram and Pinout Assignment
*For additional marking information, refer to
Application Note AND8002/D.
MARKING
DIAGRAMS*
KL07
ALYWG
G
SOIC8
D SUFFIX
CASE 751
1
8
TSSOP8
DT SUFFIX
CASE 948R
1
8
1
8
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
KEL07
ALYW
G
1
8
DFN8
MN SUFFIX
CASE 506AA
2D
M
G
14
4P
M
G
14
HL07
ALYWG
G
1
8
HEL07
ALYW
G
1
8
(Note: Microdot may be in either location)
H = MC10
K = MC100
4P = MC10
2D = MC100
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
M = Date Code
G = PbFree Package
相关PDF资料 |
PDF描述 |
|---|---|
| MC10EL07DR2G | IC GATE XOR/XNOR ECL 2INP 8-SOIC |
| 3-1879467-1 | RES 330 OHM 100W 5% WW WIRE |
| MC10EL05DTR2G | IC RCVR/DRVR 5V DIFF ECL 8-TSSOP |
| 3-1879467-0 | RES 270 OHM 100W 5% WW WIRE |
| MC10EL05DR2G | IC GATE AND/NAND ECL 2INP 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MC10EL11D | 功能描述:时钟缓冲器 5V ECL 1:2 Diff RoHS:否 制造商:Texas Instruments 输出端数量:5 最大输入频率:40 MHz 传播延迟（最大值）: 电源电压-最大:3.45 V 电源电压-最小:2.375 V 最大功率耗散: 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:LLP-24 封装:Reel |
| MC10EL11DG | 功能描述:时钟缓冲器 5V ECL 1:2 Diff Fanout Buffer RoHS:否 制造商:Texas Instruments 输出端数量:5 最大输入频率:40 MHz 传播延迟（最大值）: 电源电压-最大:3.45 V 电源电压-最小:2.375 V 最大功率耗散: 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:LLP-24 封装:Reel |
| MC10EL11DG | 制造商:ON Semiconductor 功能描述:Clock Generator / Distributor Logic IC |
| MC10EL11DR2 | 功能描述:时钟缓冲器 5V ECL 1:2 Diff RoHS:否 制造商:Texas Instruments 输出端数量:5 最大输入频率:40 MHz 传播延迟（最大值）: 电源电压-最大:3.45 V 电源电压-最小:2.375 V 最大功率耗散: 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:LLP-24 封装:Reel |
| MC10EL11DR2G | 功能描述:时钟缓冲器 5V ECL 1:2 Diff Fanout Buffer RoHS:否 制造商:Texas Instruments 输出端数量:5 最大输入频率:40 MHz 传播延迟（最大值）: 电源电压-最大:3.45 V 电源电压-最小:2.375 V 最大功率耗散: 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:LLP-24 封装:Reel |
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