参数资料
型号: MC10EP142FAR2G
厂商: ON Semiconductor
文件页数: 12/13页
文件大小: 0K
描述: IC SHIFT REGISTR 9BIT ECL 32LQFP
标准包装: 2,000
系列: 10EP
逻辑类型: 移位寄存器
输出类型: 标准
元件数: 1
每个元件的位元数: 9
功能: 通用
电源电压: 3 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 32-LQFP
供应商设备封装: 32-LQFP(7x7)
包装: 带卷 (TR)
其它名称: MC10EP142FAR2GOS
MC10EP142, MC100EP142
http://onsemi.com
8
Table 9. 100EP DC CHARACTERISTICS, PECL VCC = 5.0 V, VEE = 0 V (Note 18)
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Negative Power Supply Current
(Note 19)
105
125
145
105
130
150
105
130
150
mA
VOH
Output HIGH Voltage (Note 20)
3855
3980
4105
3855
3980
4105
3855
3980
4105
mV
VOL
Output LOW Voltage (Note 20)
3055
3180
3305
3055
3180
3305
3055
3180
3305
mV
VIH
Input HIGH Voltage (SingleEnded)
3775
4120
3775
4120
3775
4120
mV
VIL
Input LOW Voltage (SingleEnded)
3055
3375
3055
3375
3055
3375
mV
VIHCMR
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 21)
2.0
5.0
2.0
5.0
2.0
5.0
V
IIH
Input HIGH Current (@ VIH)
150
mA
IIL
Input LOW Current (@ VIL)
CLK0, CLK1, D, SIN
CLK0, CLK1, SIN
0.5
150
0.5
150
0.5
150
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
18.Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to 0.5 V.
19.Required 500 lfpm air flow when using +5 V power supply. For (VCC VEE) >3.3 V, 5 W to 10 W in line with VEE required for maximum thermal
protection at elevated temperatures. Recommend VCCVEE operation at 3.3 V.
20.All loading with 50 W to VCC 2.0 V.
21.VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
Table 10. 100EP DC CHARACTERISTICS, NECL VCC = 0 V, VEE = 5.5 V to 3.0 V (Note 22)
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Negative Power Supply Current
(Note 23)
105
125
145
105
130
150
105
130
150
mA
VOH
Output HIGH Voltage (Note 24)
1145 1020
895
1145 1020
895
1145 1020
895
mV
VOL
Output LOW Voltage (Note 24)
1945 1820 1695 1945 1820 1695 1945 1820 1695
mV
VIH
Input HIGH Voltage (SingleEnded)
1225
880
1225
880
1225
880
mV
VIL
Input LOW Voltage (SingleEnded)
1945
1625 1945
1625
mV
VIHCMR
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 25)
VEE+2.0
0.0
VEE+2.0
0.0
VEE+2.0
0.0
V
IIH
Input HIGH Current (@ VIH)
150
mA
IIL
Input LOW Current (@ VIL)
CLK0, CLK1, D, SIN
CLK0, CLK1, SIN
0.5
150
0.5
150
0.5
150
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
22.Input and output parameters vary 1:1 with VCC.
23.Required 500 lfpm air flow when using 5 V power supply. For (VCC VEE) >3.3 V, 5 W to 10 W in line with VEE required for maximum thermal
protection at elevated temperatures. Recommend VCCVEE operation at 3.3 V.
24.All loading with 50 W to VCC 2.0 V.
25.VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
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