参数资料
型号: MC10EP35DTR2G
厂商: ON Semiconductor
文件页数: 7/11页
文件大小: 0K
描述: IC FLIP FLOP JK ECL HS LV 8TSSOP
标准包装: 2,500
系列: 10EP
功能: 复位
类型: JK 型
输出类型: 差分
元件数: 1
每个元件的位元数: 1
频率 - 时钟: 3GHz
延迟时间 - 传输: 410ps
触发器类型: 正边沿
电源电压: 3 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-TSSOP,8-MSOP(0.118",3.00mm 宽)
包装: 带卷 (TR)
其它名称: MC10EP35DTR2GOS
MC10EP35, MC100EP35
http://onsemi.com
5
Table 8. 100EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 9)
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
30
40
50
30
40
50
30
40
50
mA
VOH
Output HIGH Voltage (Note 10)
2155
2280
2405
2155
2280
2405
2155
2280
2405
mV
VOL
Output LOW Voltage (Note 10)
1355
1480
1605
1355
1480
1605
1355
1480
1605
mV
VIH
Input HIGH Voltage (SingleEnded)
2075
2420
2075
2420
2075
2420
mV
VIL
Input LOW Voltage (SingleEnded)
1355
1675
1355
1675
1355
1675
mV
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
9. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to 2.2 V.
10.All loading with 50 W to VCC 2.0 V.
Table 9. 100EP DC CHARACTERISTICS, PECL VCC = 5.0 V, VEE = 0 V (Note 11)
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
30
40
50
30
40
50
30
40
50
mA
VOH
Output HIGH Voltage (Note 12)
3855
3980
4105
3855
3980
4105
3855
3980
4105
mV
VOL
Output LOW Voltage (Note 12)
3055
3180
3305
3055
3180
3305
3055
3180
3305
mV
VIH
Input HIGH Voltage (SingleEnded)
3775
4120
3775
4120
3775
4120
mV
VIL
Input LOW Voltage (SingleEnded)
3055
3375
3055
3375
3055
3375
mV
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
11. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to 0.5 V.
12.All loading with 50 W to VCC 2.0 V.
Table 10. 100EP DC CHARACTERISTICS, NECL VCC = 0 V; VEE = 5.5 V to 3.0 V (Note 13)
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
30
40
50
30
40
50
30
40
50
mA
VOH
Output HIGH Voltage (Note 14)
1145 1020
895
1145 1020
895
1145 1020
895
mV
VOL
Output LOW Voltage (Note 14)
1945 1820 1695 1945 1820 1695 1945 1820 1695
mV
VIH
Input HIGH Voltage (SingleEnded)
1225
880
1225
880
1225
880
mV
VIL
Input LOW Voltage (SingleEnded)
1945
1625 1945
1625
mV
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
13.Input and output parameters vary 1:1 with VCC.
14.All loading with 50 W to VCC 2.0 V.
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