参数资料
型号: MC10EP446MNG
厂商: ON Semiconductor
文件页数: 18/20页
文件大小: 0K
描述: IC CONV PAR/SER 8BIT DIFF 32-QFN
标准包装: 74
接口: 差分
电源电压: 3 V ~ 5.5 V
封装/外壳: 32-VFQFN 裸露焊盘
供应商设备封装: 32-QFN(5x5)
包装: 管件
安装类型: 表面贴装
MC10EP446, MC100EP446
http://onsemi.com
7
Table 8. 10EP DC CHARACTERISTICS, PECL VCC = 5.0 V, VEE = 0 V (Note 5)
Symbol
Characteristic
40°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
IEE
Power Supply Current
90
110
140
90
110
140
95
115
145
mA
VOH
Output HIGH Voltage (Note 6)
3865 3950 4115 3930 4055 4180 3990 4115 4240
mV
VOL
Output LOW Voltage (Note 6)
3065 3190 3315 3130 3255 3380 3190 3315 3440
mV
VIH
Input HIGH Voltage (SingleEnded)
CMOS
PECL
TTL
3500
3790
2000
5000
3500
3855
2000
5000
3500
3915
2000
5000
mV
VIL
Input LOW Voltage (SingleEnded)
CMOS
PECL
TTL
0
3065
0
1500
3390
800
0
3130
0
1500
3455
800
0
3190
0
1500
3915
800
mV
VBB
Output Voltage Reference
3490 3540 3690 3555 3605 3755 3615 3665 3815
mV
VIHCMR
Input HIGH Voltage Common Mode Range (Dif-
ferential Configuration) (Note 7)
2.0
5.0
2.0
5.0
2.0
5.0
V
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
(All Except SYNC, SYNC)
SYNC, SYNC
0.5
150
0.5
150
0.5
150
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
5. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to 0.5 V.
6. All loading with 50 W to VCC 2.0 V.
7. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
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